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5961-01-166-7878

20 Products

JAN2N6762

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

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JAN2N6762

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6762
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/542 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

1N5817

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667503

NSN

5961-01-166-7503

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1N5817

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667503

NSN

5961-01-166-7503

MFG

FREESCALE SEMICONDUCTOR INC.

SB120-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667503

NSN

5961-01-166-7503

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SB120-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667503

NSN

5961-01-166-7503

MFG

GENERAL SEMICONDUCTOR INC

FBMZ170

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667504

NSN

5961-01-166-7504

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FBMZ170

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667504

NSN

5961-01-166-7504

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

FBP00-053

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011667505

NSN

5961-01-166-7505

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FBP00-053

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011667505

NSN

5961-01-166-7505

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.173 INCHES MINIMUM
OVERALL LENGTH: 0.197 INCHES MAXIMUM
OVERALL WIDTH: 0.216 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

807688

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667506

NSN

5961-01-166-7506

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807688

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667506

NSN

5961-01-166-7506

MFG

NORTH ATLANTIC INDUSTRIES INC.

807689

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667507

NSN

5961-01-166-7507

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807689

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011667507

NSN

5961-01-166-7507

MFG

NORTH ATLANTIC INDUSTRIES INC.

2N5004

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

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2N5004

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

MFG

MICROSEMI PPC INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5004
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/534
OVERALL LENGTH: 1.296 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/534 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

8002080-504

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

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8002080-504

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5004
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/534
OVERALL LENGTH: 1.296 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/534 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

917AS6068

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

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917AS6068

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

MFG

NAVAL AIR SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5004
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/534
OVERALL LENGTH: 1.296 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/534 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JANTX2N5004

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

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JANTX2N5004

TRANSISTOR

NSN, MFG P/N

5961011667877

NSN

5961-01-166-7877

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5004
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/534
OVERALL LENGTH: 1.296 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/534 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

205063P2

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

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205063P2

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6762
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/542 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

6710554

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

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6710554

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

MFG

NAVAL SEA SYSTEMS COMMAND

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6762
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/542 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

8001566-562

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

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8001566-562

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6762
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/542 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

94-0262

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

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94-0262

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6762
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/542 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

A28407

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

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A28407

TRANSISTOR

NSN, MFG P/N

5961011667878

NSN

5961-01-166-7878

MFG

MBDA UK LTD

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6762
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/542 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

CMP22

RETAINER

NSN, MFG P/N

5961011668049

NSN

5961-01-166-8049

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CMP22

RETAINER

NSN, MFG P/N

5961011668049

NSN

5961-01-166-8049

MFG

CHICAGO MINIATURE LIGHTING LLC DBA CHICAGO MINIATURE OPTOELECTRON

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: MATERIAL POLYPRO; COLOR BLACK; FOR TAPERED LAMPSHAPEL MAX PANEL THICKNESS 0.187 IN.; MOUNTING HOLE DIA 0.250 IN.; LG FOR PANEL MOUNT 0.265 IN.; 0.310 IN. DIA; LG FOR MOUNTING CLIP 0.165 IN.; 0.360 IN. DIA; FOR LAMP SIZE T-1.750 IN.

2500448-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011668187

NSN

5961-01-166-8187

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2500448-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011668187

NSN

5961-01-166-8187

MFG

L-3 COMMUNICATIONS HOLDINGS INC. DBA SPACE AND NAVIGATION DIV SPACE & NAVIGATION

SDA215-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011668187

NSN

5961-01-166-8187

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SDA215-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011668187

NSN

5961-01-166-8187

MFG

FREESCALE SEMICONDUCTOR INC.

11-02421-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011668991

NSN

5961-01-166-8991

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11-02421-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011668991

NSN

5961-01-166-8991

MFG

COMPAQ FEDERAL LLC

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N753A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0