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5961-01-243-5498
20 Products
94-0299
TRANSISTOR
NSN, MFG P/N
5961012435498
NSN
5961-01-243-5498
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
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D-190-0100-M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012434463
NSN
5961-01-243-4463
D-190-0100-M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012434463
NSN
5961-01-243-4463
MFG
HERLEY-CTI INC . DIV HERLEY-CTI INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM BREAKDOWN VOLTAGE, DC
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MA46941
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012434463
NSN
5961-01-243-4463
MFG
L-3 SERVICES INC. DBA LINKABIT DIV LINKABIT
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM BREAKDOWN VOLTAGE, DC
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SC3BK1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012434476
NSN
5961-01-243-4476
SC3BK1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012434476
NSN
5961-01-243-4476
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 375.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012434476
NSN
5961-01-243-4476
SM-A-883074-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012434476
NSN
5961-01-243-4476
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 375.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012434849
NSN
5961-01-243-4849
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: SVD100-6I
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 01281
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.469 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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345-262-036
TRANSISTOR
NSN, MFG P/N
5961012435497
NSN
5961-01-243-5497
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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94-0805
TRANSISTOR
NSN, MFG P/N
5961012435497
NSN
5961-01-243-5497
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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7908957-10
TRANSISTOR
NSN, MFG P/N
5961012435498
NSN
5961-01-243-5498
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435499
NSN
5961-01-243-5499
7909233-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435499
NSN
5961-01-243-5499
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 47.00 AMPERES MAXIMUM PEAK PULSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 KILOWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.345 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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GZ24426N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435499
NSN
5961-01-243-5499
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 47.00 AMPERES MAXIMUM PEAK PULSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 KILOWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.345 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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S6123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435499
NSN
5961-01-243-5499
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 47.00 AMPERES MAXIMUM PEAK PULSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 KILOWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.345 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435499
NSN
5961-01-243-5499
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435499
NSN
5961-01-243-5499
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 47.00 AMPERES MAXIMUM PEAK PULSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 KILOWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.345 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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B235176-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012435500
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012435500
NSN
5961-01-243-5500
MFG
INTEGRATED POWER SYSTEMS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.656 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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2N5337
TRANSISTOR
NSN, MFG P/N
5961012435728
NSN
5961-01-243-5728
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961012435728
NSN
5961-01-243-5728
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
TRANSISTOR
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G390272S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435729
NSN
5961-01-243-5729
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
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JANTX1N3332B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435729
NSN
5961-01-243-5729
JANTX1N3332B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435729
NSN
5961-01-243-5729
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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DZ850815B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435730
NSN
5961-01-243-5730
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
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G390273S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012435730
NSN
5961-01-243-5730
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
