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5961-00-107-6169
20 Products
1N757A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001076169
NSN
5961-00-107-6169
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 94580
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 959525-12
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.5 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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2068173-0701
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
2068173-0701
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.565 INCHES NOMINAL
OVERALL WIDTH: 0.585 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
67-0533
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
67-0533
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.565 INCHES NOMINAL
OVERALL WIDTH: 0.585 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
67A5A21-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
67A5A21-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.565 INCHES NOMINAL
OVERALL WIDTH: 0.585 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
MDA942-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MDA942-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.565 INCHES NOMINAL
OVERALL WIDTH: 0.585 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
Q317811003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
Q317811003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MFG
RHEINMETALL AIR DEFENCE AG
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.565 INCHES NOMINAL
OVERALL WIDTH: 0.585 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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X1909324-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
X1909324-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001076050
NSN
5961-00-107-6050
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER GUIDANCE SYSTEMS DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.565 INCHES NOMINAL
OVERALL WIDTH: 0.585 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
1793B54
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001076164
NSN
5961-00-107-6164
MFG
RODALE WIRELESS INC. DBA RODALE WIRELESS DIV RODALE ELECTRONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 16111-1793B54 DRAWING
Related Searches:
1992286-2
TRANSISTOR
NSN, MFG P/N
5961001076165
NSN
5961-00-107-6165
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
MFR SOURCE CONTROLLING REFERENCE: 1992286-2
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N3700
TRANSISTOR
NSN, MFG P/N
5961001076165
NSN
5961-00-107-6165
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
MFR SOURCE CONTROLLING REFERENCE: 1992286-2
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N3700A
TRANSISTOR
NSN, MFG P/N
5961001076165
NSN
5961-00-107-6165
MFG
ADELCO ELEKTRONIK GMBH
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
MFR SOURCE CONTROLLING REFERENCE: 1992286-2
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N757AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001076169
NSN
5961-00-107-6169
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 94580
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 959525-12
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.5 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
959525-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001076169
NSN
5961-00-107-6169
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 94580
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 959525-12
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.5 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
304-0193-001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001076178
NSN
5961-00-107-6178
304-0193-001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001076178
NSN
5961-00-107-6178
MFG
RAYTHEON E-SYSTEMS INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN 1ST TRANSISTOR PNP 2ND TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION 1ST TRANSISTOR 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION 2ND TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINA
Related Searches:
V1795
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001076208
NSN
5961-00-107-6208
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
OVERALL DIAMETER: 6.784 INCHES NOMINAL
SPECIAL FEATURES: METAL
Related Searches:
1N4186B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001076480
NSN
5961-00-107-6480
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4327 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5441B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001076489
NSN
5961-00-107-6489
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N3988
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001076493
NSN
5961-00-107-6493
2N3988
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001076493
NSN
5961-00-107-6493
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5184 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N5249
TRANSISTOR
NSN, MFG P/N
5961001076494
NSN
5961-00-107-6494
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5639 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
JAN2N5249
TRANSISTOR
NSN, MFG P/N
5961001076494
NSN
5961-00-107-6494
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5639 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
