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5961-00-087-5801
20 Products
2N917
TRANSISTOR
NSN, MFG P/N
5961000875801
NSN
5961-00-087-5801
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: 347C725H01
MANUFACTURERS CODE: 97942
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
THE MANUFACTURERS DATA:
Related Searches:
RELEASE2985
TRANSISTOR
NSN, MFG P/N
5961000874640
NSN
5961-00-087-4640
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2985 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
10-107073-4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000874740
NSN
5961-00-087-4740
10-107073-4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000874740
NSN
5961-00-087-4740
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL
Description
MAJOR COMPONENTS: WIRE 4; PRINTED WIRING BOARD 2; DIODE 4
Related Searches:
928101-15
TRANSISTOR
NSN, MFG P/N
5961000874764
NSN
5961-00-087-4764
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 160.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.362 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 73293-928101-15 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -60.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
NS810
TRANSISTOR
NSN, MFG P/N
5961000874764
NSN
5961-00-087-4764
MFG
NATIONAL SEMICONDUCTOR CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 160.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.362 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 73293-928101-15 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -60.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
7173
TRANSISTOR
NSN, MFG P/N
5961000874935
NSN
5961-00-087-4935
MFG
TREMETRICS INC DIV OF FINNIGAN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N684
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000874939
NSN
5961-00-087-4939
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N684
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT IS PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD OR 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 300.0 MAXIMUM NONREPETIT
Related Searches:
C35G
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000874939
NSN
5961-00-087-4939
MFG
GENERAL ELECTRIC CO
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N684
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT IS PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD OR 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 300.0 MAXIMUM NONREPETIT
Related Searches:
2N2642
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000875403
NSN
5961-00-087-5403
2N2642
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000875403
NSN
5961-00-087-5403
MFG
TELCOM SEMICONDUCTOR INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94580
MFR SOURCE CONTROLLING REFERENCE: 959496-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMI
Related Searches:
959496-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000875403
NSN
5961-00-087-5403
959496-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000875403
NSN
5961-00-087-5403
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94580
MFR SOURCE CONTROLLING REFERENCE: 959496-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMI
Related Searches:
394-1599-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875485
NSN
5961-00-087-5485
394-1599-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875485
NSN
5961-00-087-5485
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
DHD330
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875505
NSN
5961-00-087-5505
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SM-B-574532
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875505
NSN
5961-00-087-5505
SM-B-574532
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875505
NSN
5961-00-087-5505
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1N1525A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875717
NSN
5961-00-087-5717
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1525A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1Z15T5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875717
NSN
5961-00-087-5717
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1525A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
19C301484P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875718
NSN
5961-00-087-5718
19C301484P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875718
NSN
5961-00-087-5718
MFG
GENERAL ELECTRIC CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2814A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
1N2814A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875718
NSN
5961-00-087-5718
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2814A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
50M16Z10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875718
NSN
5961-00-087-5718
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2814A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
347C830H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875799
NSN
5961-00-087-5799
347C830H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875799
NSN
5961-00-087-5799
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 347C830H01
MANUFACTURERS CODE: 97942
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
THE MANUFACTURERS DATA:
Related Searches:
HU5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000875799
NSN
5961-00-087-5799
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 347C830H01
MANUFACTURERS CODE: 97942
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
THE MANUFACTURERS DATA:
