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5961-00-418-2488

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340295-1

TRANSISTOR

NSN, MFG P/N

5961004182488

NSN

5961-00-418-2488

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340295-1

TRANSISTOR

NSN, MFG P/N

5961004182488

NSN

5961-00-418-2488

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 00752
MFR SOURCE CONTROLLING REFERENCE: 340295-1
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

TXP0508ND

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182477

NSN

5961-00-418-2477

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TXP0508ND

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182477

NSN

5961-00-418-2477

MFG

CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
MANUFACTURERS CODE: 00752
MATERIAL: BERYLLIUM AND COPPER
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 ASSN STD SINGLE MATERIAL RESPONSE
MFR SOURCE CONTROLLING REFERENCE: 329528-1
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.415 INCHES MINIMUM AND 0.445 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CAPACITANCE: 4.5 - 5.5 PF; DIELECTRIC STRENGTH: 500V PER MIL-STD-202, METHOD 301; THERMAL RESISTANCE:15 DEG C/ WATT MAX.
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-N-290 ASSN STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

11781366-6

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

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11781366-6

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
MANUFACTURERS CODE: 00752
MATERIAL: BERYLLIUM AND COPPER
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 ASSN STD SINGLE MATERIAL RESPONSE
MFR SOURCE CONTROLLING REFERENCE: 329528-2
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL HEIGHT: 0.335 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CAPACITANCE: 2 - 3 PF; DIELECTRIC STRENGTH: 500V PER MIL-STD-202, METHOD 301; THERMAL RESISTANCE: 15 DEG C/WATT MAX.
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-N-290 ASSN STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

329528-2

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

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329528-2

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
MANUFACTURERS CODE: 00752
MATERIAL: BERYLLIUM AND COPPER
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 ASSN STD SINGLE MATERIAL RESPONSE
MFR SOURCE CONTROLLING REFERENCE: 329528-2
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL HEIGHT: 0.335 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CAPACITANCE: 2 - 3 PF; DIELECTRIC STRENGTH: 500V PER MIL-STD-202, METHOD 301; THERMAL RESISTANCE: 15 DEG C/WATT MAX.
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-N-290 ASSN STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

640057P8

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

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640057P8

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
MANUFACTURERS CODE: 00752
MATERIAL: BERYLLIUM AND COPPER
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 ASSN STD SINGLE MATERIAL RESPONSE
MFR SOURCE CONTROLLING REFERENCE: 329528-2
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL HEIGHT: 0.335 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CAPACITANCE: 2 - 3 PF; DIELECTRIC STRENGTH: 500V PER MIL-STD-202, METHOD 301; THERMAL RESISTANCE: 15 DEG C/WATT MAX.
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-N-290 ASSN STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

7117999-6

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

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7117999-6

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

MFG

LITTON SYSTEMS INC GUIDANCE AND CONTROL SYSTEMS DIV

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
MANUFACTURERS CODE: 00752
MATERIAL: BERYLLIUM AND COPPER
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 ASSN STD SINGLE MATERIAL RESPONSE
MFR SOURCE CONTROLLING REFERENCE: 329528-2
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL HEIGHT: 0.335 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CAPACITANCE: 2 - 3 PF; DIELECTRIC STRENGTH: 500V PER MIL-STD-202, METHOD 301; THERMAL RESISTANCE: 15 DEG C/WATT MAX.
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-N-290 ASSN STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

TXP1808ND

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

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TXP1808ND

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004182478

NSN

5961-00-418-2478

MFG

CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
MANUFACTURERS CODE: 00752
MATERIAL: BERYLLIUM AND COPPER
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 ASSN STD SINGLE MATERIAL RESPONSE
MFR SOURCE CONTROLLING REFERENCE: 329528-2
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL HEIGHT: 0.335 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CAPACITANCE: 2 - 3 PF; DIELECTRIC STRENGTH: 500V PER MIL-STD-202, METHOD 301; THERMAL RESISTANCE: 15 DEG C/WATT MAX.
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-N-290 ASSN STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

333118-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182479

NSN

5961-00-418-2479

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333118-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182479

NSN

5961-00-418-2479

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.015 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 FERRULE

334721-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182480

NSN

5961-00-418-2480

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334721-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182480

NSN

5961-00-418-2480

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND CONTACT SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-334721 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

334721-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182481

NSN

5961-00-418-2481

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334721-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182481

NSN

5961-00-418-2481

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, DC

334863-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182482

NSN

5961-00-418-2482

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334863-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182482

NSN

5961-00-418-2482

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.071 INCHES NOMINAL
OVERALL LENGTH: 0.155 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

MA4827A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182482

NSN

5961-00-418-2482

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MA4827A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182482

NSN

5961-00-418-2482

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.071 INCHES NOMINAL
OVERALL LENGTH: 0.155 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

335062-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004182485

NSN

5961-00-418-2485

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335062-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004182485

NSN

5961-00-418-2485

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE

SA4357

TRANSISTOR

NSN, MFG P/N

5961004182488

NSN

5961-00-418-2488

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SA4357

TRANSISTOR

NSN, MFG P/N

5961004182488

NSN

5961-00-418-2488

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 00752
MFR SOURCE CONTROLLING REFERENCE: 340295-1
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

360722-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182491

NSN

5961-00-418-2491

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360722-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182491

NSN

5961-00-418-2491

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-360722 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 1.2 MAXIMUM FORWARD VOLTAGE, DC

5082-8392

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182491

NSN

5961-00-418-2491

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5082-8392

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182491

NSN

5961-00-418-2491

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-360722 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 1.2 MAXIMUM FORWARD VOLTAGE, DC

A2X1121

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182491

NSN

5961-00-418-2491

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A2X1121

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182491

NSN

5961-00-418-2491

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-360722 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 1.2 MAXIMUM FORWARD VOLTAGE, DC

360722-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182492

NSN

5961-00-418-2492

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360722-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182492

NSN

5961-00-418-2492

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, DC

5082-2302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182492

NSN

5961-00-418-2492

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5082-2302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182492

NSN

5961-00-418-2492

MFG

HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, DC

60722-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182492

NSN

5961-00-418-2492

View More Info

60722-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004182492

NSN

5961-00-418-2492

MFG

HAM RADIO CENTER HAM-KEY DIV HAM-KEY DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, DC