My Quote Request
No products added yet
5961-00-064-2826
20 Products
13220E2970
TRANSISTOR
NSN, MFG P/N
5961000642826
NSN
5961-00-064-2826
MFG
CECOM LR CENTER
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
330SA165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
EATON CORPORATION DIV ELECTRICAL SENSING AND CONTROLS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
352250009909
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
352250009909
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
THALES NEDERLAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-2610-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
353-2610-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
418286-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5961000642379
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
5961000642379
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8-710210-649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
8-710210-649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
LABAVIA SGE SARL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
819782-26
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
87-1021-0649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
87-1021-0649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
LABINAL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
87737
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
THALES AVIONICS ELECTRICAL SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
947060-6490
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
947060-6490
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
99001963
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
THALES VORM THOMSON-CSF ELEKTRONIK GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N649A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
ADELCO ELEKTRONIK GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
USAF1N649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV ADVANCED TECHNOLOGY LABORATORIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
555281-142
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642427
NSN
5961-00-064-2427
555281-142
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642427
NSN
5961-00-064-2427
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.093 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
401001-4
TRANSISTOR
NSN, MFG P/N
5961000642667
NSN
5961-00-064-2667
MFG
ALLIANT DEFENSE ELECTRONICS SYSTEMS INC DBA LUNDY TECHNICAL CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE
Related Searches:
4JX5B592
TRANSISTOR
NSN, MFG P/N
5961000642667
NSN
5961-00-064-2667
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE
Related Searches:
99-3657-004
TRANSISTOR
NSN, MFG P/N
5961000642667
NSN
5961-00-064-2667
MFG
KILGORE FLARES COMPANY LLC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE
Related Searches:
X5B592
TRANSISTOR
NSN, MFG P/N
5961000642667
NSN
5961-00-064-2667
MFG
GPD OPTOELECTRONICS CORP.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE
