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5961-00-761-2771
20 Products
11587879
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
11587879
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
FDH281
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007612049
NSN
5961-00-761-2049
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: FDH281
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07263
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
26006910
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007612050
NSN
5961-00-761-2050
MFG
THALES COMPONENTS CORPORATION
Description
DESIGN CONTROL REFERENCE: FD2089
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13715
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
FD2089
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007612050
NSN
5961-00-761-2050
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
DESIGN CONTROL REFERENCE: FD2089
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13715
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
FD841
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007612050
NSN
5961-00-761-2050
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: FD2089
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13715
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
DU1A
TRANSISTOR
NSN, MFG P/N
5961007612054
NSN
5961-00-761-2054
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: DU1A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
DU6A
TRANSISTOR
NSN, MFG P/N
5961007612057
NSN
5961-00-761-2057
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: DU6A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2604720-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
2604720-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
388689-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
388689-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
46501-003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
46501-003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
MFG
SAIA-BURGESS INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
C5B27307
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
C5B27307
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007612771
NSN
5961-00-761-2771
MFG
SPECO CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1N3011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007612788
NSN
5961-00-761-2788
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
910597
TRANSISTOR
NSN, MFG P/N
5961007613814
NSN
5961-00-761-3814
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
USA2N1717
TRANSISTOR
NSN, MFG P/N
5961007613814
NSN
5961-00-761-3814
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
353-3436-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613855
NSN
5961-00-761-3855
353-3436-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613855
NSN
5961-00-761-3855
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.294 INCHES NOMINAL
OVERALL LENGTH: 0.635 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
D4180C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613855
NSN
5961-00-761-3855
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.294 INCHES NOMINAL
OVERALL LENGTH: 0.635 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MA4127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613855
NSN
5961-00-761-3855
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.294 INCHES NOMINAL
OVERALL LENGTH: 0.635 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
019-005893-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613857
NSN
5961-00-761-3857
019-005893-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613857
NSN
5961-00-761-3857
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/229 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1047634P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613857
NSN
5961-00-761-3857
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/229 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
5800583-926200.111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613857
NSN
5961-00-761-3857
5800583-926200.111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007613857
NSN
5961-00-761-3857
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/229 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
