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5961-00-026-9661
20 Products
1N5550
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JAN1N3028B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000268995
NSN
5961-00-026-8995
JAN1N3028B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000268995
NSN
5961-00-026-8995
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L00947
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
L00947
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000268995
NSN
5961-00-026-8995
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L00947
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N3767
TRANSISTOR
NSN, MFG P/N
5961000269019
NSN
5961-00-026-9019
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 82577-928422 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
928422-1
TRANSISTOR
NSN, MFG P/N
5961000269019
NSN
5961-00-026-9019
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 82577-928422 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
A10036-1
TRANSISTOR
NSN, MFG P/N
5961000269019
NSN
5961-00-026-9019
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 82577-928422 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SJ2132H1
TRANSISTOR
NSN, MFG P/N
5961000269019
NSN
5961-00-026-9019
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 82577-928422 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
1N4978
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269354
NSN
5961-00-026-9354
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5203 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.107 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4978A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269354
NSN
5961-00-026-9354
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5203 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.107 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
10RC10A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000269386
NSN
5961-00-026-9386
10RC10A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000269386
NSN
5961-00-026-9386
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
13-13029-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000269386
NSN
5961-00-026-9386
13-13029-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000269386
NSN
5961-00-026-9386
MFG
ASTEC AMERICA INC .
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
115032-301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269626
NSN
5961-00-026-9626
115032-301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269626
NSN
5961-00-026-9626
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ2021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269626
NSN
5961-00-026-9626
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2330-0307
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
CIRCOR AEROSPACE INC. DBA CIRCLE SEAL CONTROLS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
337449-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
337449-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
353+9009+591
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
353+9009+591
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
353-9009-591
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
353-9009-591
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
353-9009-592
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
353-9009-592
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
COLE DIV OF LITTON BUSINESS SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
353-9019-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
353-9019-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
D00001N5622D1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
D00001N5622D1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000269661
NSN
5961-00-026-9661
MFG
INDRA SISTEMAS S.A.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
