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5961-00-249-3746
20 Products
46R20SP8B8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493746
NSN
5961-00-249-3746
46R20SP8B8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493746
NSN
5961-00-249-3746
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SS2203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002491636
NSN
5961-00-249-1636
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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UTR231
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002491636
NSN
5961-00-249-1636
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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0N057138
TRANSISTOR
NSN, MFG P/N
5961002491638
NSN
5961-00-249-1638
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/
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38579
TRANSISTOR
NSN, MFG P/N
5961002491638
NSN
5961-00-249-1638
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/
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0N143318
TRANSISTOR
NSN, MFG P/N
5961002492851
NSN
5961-00-249-2851
MFG
NATIONAL SECURITY AGENCY
Description
DESIGN CONTROL REFERENCE: PT4-7165-01Z
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11982
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.700 INCHES MINIMUM AND 1.760 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
PT4-7165-01Z
TRANSISTOR
NSN, MFG P/N
5961002492851
NSN
5961-00-249-2851
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DBA SPACE TECHNOLOGY SECTOR DIV SPACE TECHNOLOGY
Description
DESIGN CONTROL REFERENCE: PT4-7165-01Z
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11982
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.700 INCHES MINIMUM AND 1.760 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
1N7531
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493720
NSN
5961-00-249-3720
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4912960
TRANSISTOR
NSN, MFG P/N
5961002493722
NSN
5961-00-249-3722
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
4JX1C931
TRANSISTOR
NSN, MFG P/N
5961002493722
NSN
5961-00-249-3722
MFG
GPD OPTOELECTRONICS CORP.
Description
TRANSISTOR
Related Searches:
4JX1C932
TRANSISTOR
NSN, MFG P/N
5961002493725
NSN
5961-00-249-3725
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
TRANSISTOR
Related Searches:
4JX5B1030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493730
NSN
5961-00-249-3730
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6RS5KH51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493733
NSN
5961-00-249-3733
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6G20BA1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493737
NSN
5961-00-249-3737
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6RS5GH44THB1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002493739
NSN
5961-00-249-3739
6RS5GH44THB1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002493739
NSN
5961-00-249-3739
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
6RS6GH5BA1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493740
NSN
5961-00-249-3740
6RS6GH5BA1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493740
NSN
5961-00-249-3740
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6RS106H44TSB1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493742
NSN
5961-00-249-3742
6RS106H44TSB1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493742
NSN
5961-00-249-3742
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6RS205P8B8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493743
NSN
5961-00-249-3743
6RS205P8B8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493743
NSN
5961-00-249-3743
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1796252A
TRANSISTOR
NSN, MFG P/N
5961002493745
NSN
5961-00-249-3745
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
TRANSISTOR
Related Searches:
33421
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493747
NSN
5961-00-249-3747
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
