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5961-00-018-1221
20 Products
315930
TRANSISTOR
NSN, MFG P/N
5961000181221
NSN
5961-00-018-1221
MFG
TELEMECHANICS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
AA119
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181249
NSN
5961-00-018-1249
MFG
AMPEREX ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1513271-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181271
NSN
5961-00-018-1271
1513271-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181271
NSN
5961-00-018-1271
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA43683
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181271
NSN
5961-00-018-1271
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
2N3260
TRANSISTOR
NSN, MFG P/N
5961000181274
NSN
5961-00-018-1274
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.541 INCHES NOMINAL
OVERALL LENGTH: 0.541 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
REP0RT6286
TRANSISTOR
NSN, MFG P/N
5961000181274
NSN
5961-00-018-1274
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.541 INCHES NOMINAL
OVERALL LENGTH: 0.541 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
STC7793
TRANSISTOR
NSN, MFG P/N
5961000181274
NSN
5961-00-018-1274
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.541 INCHES NOMINAL
OVERALL LENGTH: 0.541 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000181294
NSN
5961-00-018-1294
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
AK455
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000181294
NSN
5961-00-018-1294
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
2-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000181295
NSN
5961-00-018-1295
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
AK456
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000181295
NSN
5961-00-018-1295
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
P100-3213
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961000181308
NSN
5961-00-018-1308
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
SEMICONDUCTOR DEVIC
Related Searches:
P100-3213R
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961000181312
NSN
5961-00-018-1312
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
SEMICONDUCTOR DEVIC
Related Searches:
P17-120Z-A4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181318
NSN
5961-00-018-1318
P17-120Z-A4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181318
NSN
5961-00-018-1318
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
12007175
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181690
NSN
5961-00-018-1690
MFG
ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL
Description
CURRENT RATING PER CHARACTERISTIC: 3600.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.720 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR1221SL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181690
NSN
5961-00-018-1690
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3600.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.720 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR1221SLR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000181708
NSN
5961-00-018-1708
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3600.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.720 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
207017P1
TRANSISTOR
NSN, MFG P/N
5961000181712
NSN
5961-00-018-1712
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
NS1112
TRANSISTOR
NSN, MFG P/N
5961000181712
NSN
5961-00-018-1712
MFG
NATIONAL SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
SES519
TRANSISTOR
NSN, MFG P/N
5961000181712
NSN
5961-00-018-1712
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
