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5961-00-034-3480
20 Products
10178136
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000343480
NSN
5961-00-034-3480
10178136
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000343480
NSN
5961-00-034-3480
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 18876-10178136 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 6.100 INCHES NOMINAL
OVERALL WIDTH: 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
485AE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000328393
NSN
5961-00-032-8393
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.402 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
485AEDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000328393
NSN
5961-00-032-8393
485AEDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000328393
NSN
5961-00-032-8393
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.402 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
66F
TRANSISTOR
NSN, MFG P/N
5961000328398
NSN
5961-00-032-8398
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.565 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 72.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
66G
TRANSISTOR
NSN, MFG P/N
5961000328398
NSN
5961-00-032-8398
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.565 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 72.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
40209R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330110
NSN
5961-00-033-0110
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.450 INCHES NOMINAL
OVERALL LENGTH: 0.667 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
P100-40209R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330110
NSN
5961-00-033-0110
P100-40209R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330110
NSN
5961-00-033-0110
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.450 INCHES NOMINAL
OVERALL LENGTH: 0.667 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N2985A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330117
NSN
5961-00-033-0117
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
99072641
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330117
NSN
5961-00-033-0117
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
P316-EG-23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330117
NSN
5961-00-033-0117
P316-EG-23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330117
NSN
5961-00-033-0117
MFG
G & M POWER PLANT LTD
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
P316EG22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000330117
NSN
5961-00-033-0117
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
741C5040-02-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000336300
NSN
5961-00-033-6300
741C5040-02-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000336300
NSN
5961-00-033-6300
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
DESIGN CONTROL REFERENCE: 741C5040-02-020
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 86360
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
741C3040-05-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000336308
NSN
5961-00-033-6308
741C3040-05-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000336308
NSN
5961-00-033-6308
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
DESIGN CONTROL REFERENCE: 741C3040-05-020
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 86360
OVERALL HEIGHT: 0.850 INCHES NOMINAL
OVERALL LENGTH: 1.625 INCHES NOMINAL
OVERALL WIDTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
559997-130
HEATSINK SEMICONDUC
NSN, MFG P/N
5961000337878
NSN
5961-00-033-7878
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
HEATSINK SEMICONDUC
Related Searches:
TXHP019-032
HEATSINK SEMICONDUC
NSN, MFG P/N
5961000337878
NSN
5961-00-033-7878
MFG
CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS
Description
HEATSINK SEMICONDUC
Related Searches:
1808-4B63
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000338115
NSN
5961-00-033-8115
1808-4B63
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000338115
NSN
5961-00-033-8115
MFG
LANDIS AND GYR UTILITIES SERVICES INC
Description
COMPONENT NAME AND QUANTITY: 24 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
Related Searches:
1N1777
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000341803
NSN
5961-00-034-1803
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 14.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
12540-707
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000343164
NSN
5961-00-034-3164
12540-707
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000343164
NSN
5961-00-034-3164
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 12540-707
III END ITEM IDENTIFICATION: LGM-30 MINUTEMAN
MAJOR COMPONENTS: CIRCUIT BOARD 1; HEAT SINK 3; TERMINAL STUD 8; TERMINAL 6; TRANSISTOR 6; AND RELATED HARDWARE
MANUFACTURERS CODE: 94756
THE MANUFACTURERS DATA:
Related Searches:
12549-707
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000343165
NSN
5961-00-034-3165
12549-707
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000343165
NSN
5961-00-034-3165
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 12549-707
III END ITEM IDENTIFICATION: LGM-30 MINUTEMAN
MAJOR COMPONENTS: CIRCUIT BOARD 1; HEAT SINK 2; TRANSISTOR 6; TERMINAL STUD 6; TERMINAL LUG 6; AND RELATED HARDWARE
MANUFACTURERS CODE: 94756
THE MANUFACTURERS DATA:
Related Searches:
ED8735
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000343480
NSN
5961-00-034-3480
ED8735
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000343480
NSN
5961-00-034-3480
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 18876-10178136 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 6.100 INCHES NOMINAL
OVERALL WIDTH: 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
