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5961-00-110-7841
20 Products
11-10488-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001107841
NSN
5961-00-110-7841
11-10488-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001107841
NSN
5961-00-110-7841
MFG
COMPAQ FEDERAL LLC
Description
CURRENT RATING PER CHARACTERISTIC: 49.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES NOMINAL
OVERALL LENGTH: 0.080 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
STCR1097-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001107648
NSN
5961-00-110-7648
STCR1097-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001107648
NSN
5961-00-110-7648
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT AND 4.70 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 97942
Related Searches:
10001160
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
10001160
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
MFG
DIGITEC CORP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.333 INCHES NOMINAL
TERMINAL LENGTH: 0.479 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
212-121-0002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
212-121-0002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
MFG
VDO CONTROL SYSTEMS INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.333 INCHES NOMINAL
TERMINAL LENGTH: 0.479 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
40002256-000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
40002256-000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
MFG
DNE TECHNOLOGIES INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.333 INCHES NOMINAL
TERMINAL LENGTH: 0.479 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
TD101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001107657
NSN
5961-00-110-7657
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.333 INCHES NOMINAL
TERMINAL LENGTH: 0.479 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
532009
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107697
NSN
5961-00-110-7697
532009
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107697
NSN
5961-00-110-7697
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.374 INCHES NOMINAL
OVERALL LENGTH: 0.753 INCHES NOMINAL
OVERALL WIDTH: 0.753 INCHES NOMINAL
SPECIAL FEATURES: ONE 0.140 IN.DIA.UNTHD MTG HOLE;MAXIMUM ABSOLUTE POWER RATING PER CHARACTERISTIC:4.4 WATTS TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
DBS04S6211
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107697
NSN
5961-00-110-7697
DBS04S6211
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107697
NSN
5961-00-110-7697
MFG
HUGHEY & PHILLIPS INC DBA HONEYWELL AIRPORT SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.374 INCHES NOMINAL
OVERALL LENGTH: 0.753 INCHES NOMINAL
OVERALL WIDTH: 0.753 INCHES NOMINAL
SPECIAL FEATURES: ONE 0.140 IN.DIA.UNTHD MTG HOLE;MAXIMUM ABSOLUTE POWER RATING PER CHARACTERISTIC:4.4 WATTS TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
S6211
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107697
NSN
5961-00-110-7697
MFG
ST-SEMICON INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.374 INCHES NOMINAL
OVERALL LENGTH: 0.753 INCHES NOMINAL
OVERALL WIDTH: 0.753 INCHES NOMINAL
SPECIAL FEATURES: ONE 0.140 IN.DIA.UNTHD MTG HOLE;MAXIMUM ABSOLUTE POWER RATING PER CHARACTERISTIC:4.4 WATTS TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
1400121-32
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
1400121-32
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
MFG
THALES TRAINING & SIMULATION LTD
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK FORWARD SURGE CURRENT AND 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL DIAMETER: 0.956 INCHES NOMINAL
OVERALL LENGTH: 0.537 INCHES NOMINAL
SPECIAL FEATURES: ONE0.250-20 IN.UNC-2A THD STUD;TERMINAL TYPE AND QTY:STAKE ON,4;MAX ABSOLUTE POWER RATING PER CHARACTERISTIC:25.0
Related Searches:
343-254-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
343-254-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK FORWARD SURGE CURRENT AND 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL DIAMETER: 0.956 INCHES NOMINAL
OVERALL LENGTH: 0.537 INCHES NOMINAL
SPECIAL FEATURES: ONE0.250-20 IN.UNC-2A THD STUD;TERMINAL TYPE AND QTY:STAKE ON,4;MAX ABSOLUTE POWER RATING PER CHARACTERISTIC:25.0
Related Searches:
7030044-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
7030044-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
MFG
ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK FORWARD SURGE CURRENT AND 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL DIAMETER: 0.956 INCHES NOMINAL
OVERALL LENGTH: 0.537 INCHES NOMINAL
SPECIAL FEATURES: ONE0.250-20 IN.UNC-2A THD STUD;TERMINAL TYPE AND QTY:STAKE ON,4;MAX ABSOLUTE POWER RATING PER CHARACTERISTIC:25.0
Related Searches:
7538017P1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
7538017P1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK FORWARD SURGE CURRENT AND 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL DIAMETER: 0.956 INCHES NOMINAL
OVERALL LENGTH: 0.537 INCHES NOMINAL
SPECIAL FEATURES: ONE0.250-20 IN.UNC-2A THD STUD;TERMINAL TYPE AND QTY:STAKE ON,4;MAX ABSOLUTE POWER RATING PER CHARACTERISTIC:25.0
Related Searches:
VT200/S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
VT200/S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK FORWARD SURGE CURRENT AND 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL DIAMETER: 0.956 INCHES NOMINAL
OVERALL LENGTH: 0.537 INCHES NOMINAL
SPECIAL FEATURES: ONE0.250-20 IN.UNC-2A THD STUD;TERMINAL TYPE AND QTY:STAKE ON,4;MAX ABSOLUTE POWER RATING PER CHARACTERISTIC:25.0
Related Searches:
VT200S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
VT200S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001107729
NSN
5961-00-110-7729
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK FORWARD SURGE CURRENT AND 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL DIAMETER: 0.956 INCHES NOMINAL
OVERALL LENGTH: 0.537 INCHES NOMINAL
SPECIAL FEATURES: ONE0.250-20 IN.UNC-2A THD STUD;TERMINAL TYPE AND QTY:STAKE ON,4;MAX ABSOLUTE POWER RATING PER CHARACTERISTIC:25.0
Related Searches:
AMF351
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001107750
NSN
5961-00-110-7750
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
MAJOR COMPONENTS: DIODE 2
OVERALL HEIGHT: 0.060 INCHES NOMINAL
OVERALL LENGTH: 1.605 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SPECIAL FEATURES: METAL
Related Searches:
MC231
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001107774
NSN
5961-00-110-7774
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
US200A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001107774
NSN
5961-00-110-7774
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N4733
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001107841
NSN
5961-00-110-7841
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
CURRENT RATING PER CHARACTERISTIC: 49.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES NOMINAL
OVERALL LENGTH: 0.080 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4733A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001107841
NSN
5961-00-110-7841
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 49.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES NOMINAL
OVERALL LENGTH: 0.080 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
