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5961-00-152-9980
20 Products
2N1304PAIR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001529980
NSN
5961-00-152-9980
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
UZ9299-25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001528519
NSN
5961-00-152-8519
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4978
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.
Related Searches:
151973-1
TRANSISTOR
NSN, MFG P/N
5961001528520
NSN
5961-00-152-8520
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3375
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-195
Related Searches:
324-990122-376
TRANSISTOR
NSN, MFG P/N
5961001528520
NSN
5961-00-152-8520
MFG
CMC ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3375
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-195
Related Searches:
DMS 90093B
TRANSISTOR
NSN, MFG P/N
5961001528520
NSN
5961-00-152-8520
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3375
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-195
Related Searches:
JANTX2N3375
TRANSISTOR
NSN, MFG P/N
5961001528520
NSN
5961-00-152-8520
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3375
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-195
Related Searches:
JANTX2N3375A
TRANSISTOR
NSN, MFG P/N
5961001528520
NSN
5961-00-152-8520
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3375
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-195
Related Searches:
TX2N3375
TRANSISTOR
NSN, MFG P/N
5961001528520
NSN
5961-00-152-8520
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3375
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-195
Related Searches:
917AS700-28
TRANSISTOR
NSN, MFG P/N
5961001528523
NSN
5961-00-152-8523
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1890
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/225
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/225 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MI
Related Searches:
JANTX2N1890
TRANSISTOR
NSN, MFG P/N
5961001528523
NSN
5961-00-152-8523
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1890
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/225
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/225 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MI
Related Searches:
929A678-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001528796
NSN
5961-00-152-8796
MFG
SUNDSTRAND CORP ELECTRIC POWER SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
931A696-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001528796
NSN
5961-00-152-8796
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
H983
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001528796
NSN
5961-00-152-8796
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
NTD20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001529487
NSN
5961-00-152-9487
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
DESIGN CONTROL REFERENCE: NTD20
MANUFACTURERS CODE: 83701
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N960
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001529522
NSN
5961-00-152-9522
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 14.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N960
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.196 INCHES MAXIMUM
OVERALL LENGTH: 0.885 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5235A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001529523
NSN
5961-00-152-9523
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 14.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5235A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
847003-0028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001529523
NSN
5961-00-152-9523
847003-0028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001529523
NSN
5961-00-152-9523
MFG
DIAMOND ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 14.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5235A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1000-1336-0001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001529544
NSN
5961-00-152-9544
1000-1336-0001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001529544
NSN
5961-00-152-9544
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
FEATURES PROVIDED: SCREW AND WASHER
MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.370 INCHES NOMINAL
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: CADMIUM
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL 3 FED SPEC SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY
Related Searches:
TXBP032-037B
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001529544
NSN
5961-00-152-9544
TXBP032-037B
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001529544
NSN
5961-00-152-9544
MFG
CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: SPRING CLIP
FEATURES PROVIDED: SCREW AND WASHER
MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.370 INCHES NOMINAL
STYLE DESIGNATOR: 45B RADIAL SPRING CLIP
SURFACE TREATMENT: CADMIUM
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL 3 FED SPEC SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY
Related Searches:
5080-9624
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001529931
NSN
5961-00-152-9931
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 5080-9624
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
