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5961-00-173-4359

20 Products

352-1001-010

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

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352-1001-010

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

91DF103

TRANSISTOR

NSN, MFG P/N

5961001733506

NSN

5961-00-173-3506

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91DF103

TRANSISTOR

NSN, MFG P/N

5961001733506

NSN

5961-00-173-3506

MFG

SOLITRON DEVICES INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

928496-1C

TRANSISTOR

NSN, MFG P/N

5961001733506

NSN

5961-00-173-3506

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928496-1C

TRANSISTOR

NSN, MFG P/N

5961001733506

NSN

5961-00-173-3506

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SP7328B

TRANSISTOR

NSN, MFG P/N

5961001733506

NSN

5961-00-173-3506

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SP7328B

TRANSISTOR

NSN, MFG P/N

5961001733506

NSN

5961-00-173-3506

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

48-869475

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001733536

NSN

5961-00-173-3536

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48-869475

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001733536

NSN

5961-00-173-3536

MFG

MOTOROLA SYSTEMS INC APPLIED SYSTEMS UNIT SUB OF MOTOROLA INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

D27D1

TRANSISTOR

NSN, MFG P/N

5961001733957

NSN

5961-00-173-3957

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D27D1

TRANSISTOR

NSN, MFG P/N

5961001733957

NSN

5961-00-173-3957

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
OVERALL WIDTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.1 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER

D43C5

TRANSISTOR

NSN, MFG P/N

5961001733957

NSN

5961-00-173-3957

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D43C5

TRANSISTOR

NSN, MFG P/N

5961001733957

NSN

5961-00-173-3957

MFG

GENERAL ELECTRIC CO

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
OVERALL WIDTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.1 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER

CD81148

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001733959

NSN

5961-00-173-3959

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CD81148

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001733959

NSN

5961-00-173-3959

MFG

TELCOM SEMICONDUCTOR INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MJE2520

TRANSISTOR

NSN, MFG P/N

5961001734034

NSN

5961-00-173-4034

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MJE2520

TRANSISTOR

NSN, MFG P/N

5961001734034

NSN

5961-00-173-4034

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.653 INCHES MAXIMUM
OVERALL WIDTH: 0.515 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

2414952

TRANSISTOR

NSN, MFG P/N

5961001734094

NSN

5961-00-173-4094

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2414952

TRANSISTOR

NSN, MFG P/N

5961001734094

NSN

5961-00-173-4094

MFG

INTERNATIONAL BUSINESS MACHINES CORP PARTS ORDER CENTER DEPT E - 54

Description

DESIGN CONTROL REFERENCE: 2414952
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 0B6S1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.640 INCHES NOMINAL
OVERALL LENGTH: 0.906 INCHES NOMINAL
OVERALL WIDTH: 0.656 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

95445-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001734253

NSN

5961-00-173-4253

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95445-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001734253

NSN

5961-00-173-4253

MFG

4 LD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON

95446-3

TRANSISTOR

NSN, MFG P/N

5961001734255

NSN

5961-00-173-4255

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95446-3

TRANSISTOR

NSN, MFG P/N

5961001734255

NSN

5961-00-173-4255

MFG

ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

DMS 78019B

TRANSISTOR

NSN, MFG P/N

5961001734255

NSN

5961-00-173-4255

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DMS 78019B

TRANSISTOR

NSN, MFG P/N

5961001734255

NSN

5961-00-173-4255

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

95855-2

TRANSISTOR

NSN, MFG P/N

5961001734257

NSN

5961-00-173-4257

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95855-2

TRANSISTOR

NSN, MFG P/N

5961001734257

NSN

5961-00-173-4257

MFG

ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

DMS 78019B

TRANSISTOR

NSN, MFG P/N

5961001734257

NSN

5961-00-173-4257

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DMS 78019B

TRANSISTOR

NSN, MFG P/N

5961001734257

NSN

5961-00-173-4257

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

95855-4

TRANSISTOR

NSN, MFG P/N

5961001734258

NSN

5961-00-173-4258

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95855-4

TRANSISTOR

NSN, MFG P/N

5961001734258

NSN

5961-00-173-4258

MFG

ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER

DMS 78019B

TRANSISTOR

NSN, MFG P/N

5961001734258

NSN

5961-00-173-4258

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DMS 78019B

TRANSISTOR

NSN, MFG P/N

5961001734258

NSN

5961-00-173-4258

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER

48P238532

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

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48P238532

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

MFG

HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

AT-01672

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

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AT-01672

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

AT01672

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

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AT01672

TRANSISTOR

NSN, MFG P/N

5961001734359

NSN

5961-00-173-4359

MFG

KONTRON AG

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC