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5961-00-180-1330

20 Products

3042556-020-19

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801330

NSN

5961-00-180-1330

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3042556-020-19

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801330

NSN

5961-00-180-1330

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-19
MAJOR COMPONENTS: DIODE 36; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-21

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801332

NSN

5961-00-180-1332

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3042556-020-21

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801332

NSN

5961-00-180-1332

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-21
MAJOR COMPONENTS: DIODE 25; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-33

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801333

NSN

5961-00-180-1333

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3042556-020-33

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801333

NSN

5961-00-180-1333

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-33
MAJOR COMPONENTS: DIODE 21; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-31

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801335

NSN

5961-00-180-1335

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3042556-020-31

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801335

NSN

5961-00-180-1335

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-31
MAJOR COMPONENTS: DIODE 19; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-35

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801341

NSN

5961-00-180-1341

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3042556-020-35

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801341

NSN

5961-00-180-1341

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-35
MAJOR COMPONENTS: DIODE 22; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-37

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801346

NSN

5961-00-180-1346

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3042556-020-37

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801346

NSN

5961-00-180-1346

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-37
MAJOR COMPONENTS: DIODE 21; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-39

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801347

NSN

5961-00-180-1347

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3042556-020-39

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801347

NSN

5961-00-180-1347

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-39
MAJOR COMPONENTS: DIODE 30; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-41

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801353

NSN

5961-00-180-1353

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3042556-020-41

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801353

NSN

5961-00-180-1353

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-41
MAJOR COMPONENTS: DIODE 15; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-49

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801395

NSN

5961-00-180-1395

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3042556-020-49

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801395

NSN

5961-00-180-1395

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-49
MAJOR COMPONENTS: DIODE 36; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-51

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801707

NSN

5961-00-180-1707

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3042556-020-51

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801707

NSN

5961-00-180-1707

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-51
MAJOR COMPONENTS: DIODE 25; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-53

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801851

NSN

5961-00-180-1851

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3042556-020-53

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801851

NSN

5961-00-180-1851

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-53
MAJOR COMPONENTS: DIODE 21; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-55

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801950

NSN

5961-00-180-1950

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3042556-020-55

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001801950

NSN

5961-00-180-1950

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-55
MAJOR COMPONENTS: DIODE 21; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

3042556-020-61

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001802018

NSN

5961-00-180-2018

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3042556-020-61

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001802018

NSN

5961-00-180-2018

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

DESIGN CONTROL REFERENCE: 3042556-020-61
MAJOR COMPONENTS: DIODE 19; PRINTED WIRING BD 1
MANUFACTURERS CODE: 99696
THE MANUFACTURERS DATA:

353-6456-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802642

NSN

5961-00-180-2642

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353-6456-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802642

NSN

5961-00-180-2642

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

RA-304

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802841

NSN

5961-00-180-2841

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RA-304

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802841

NSN

5961-00-180-2841

MFG

VOLTAGE MULTIPLIERS INC. DBA V M I

Description

MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.500 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

SA3418

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802841

NSN

5961-00-180-2841

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SA3418

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802841

NSN

5961-00-180-2841

MFG

SEMTECH CORPORATION

Description

MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.500 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

27A10495-101-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

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27A10495-101-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

MFG

THE BOEING COMPANY DBA BOEING

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

69-7172

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

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69-7172

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

SZ51006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

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SZ51006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

TD41033

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

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TD41033

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001802857

NSN

5961-00-180-2857

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0