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5961-00-190-2963

20 Products

2N3772

TRANSISTOR

NSN, MFG P/N

5961001902963

NSN

5961-00-190-2963

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2N3772

TRANSISTOR

NSN, MFG P/N

5961001902963

NSN

5961-00-190-2963

MFG

INTERSIL CORPORATION

Description

DESIGN CONTROL REFERENCE: 2N3772
III END ITEM IDENTIFICATION: 5961-00-190-2963
MANUFACTURERS CODE: K0331
THE MANUFACTURERS DATA:

40-666-664-01

TRANSISTOR

NSN, MFG P/N

5961001901266

NSN

5961-00-190-1266

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40-666-664-01

TRANSISTOR

NSN, MFG P/N

5961001901266

NSN

5961-00-190-1266

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

CV7496

TRANSISTOR

NSN, MFG P/N

5961001901266

NSN

5961-00-190-1266

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CV7496

TRANSISTOR

NSN, MFG P/N

5961001901266

NSN

5961-00-190-1266

MFG

QINETIQ LTD

40-666-6089

TRANSISTOR

NSN, MFG P/N

5961001901319

NSN

5961-00-190-1319

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40-666-6089

TRANSISTOR

NSN, MFG P/N

5961001901319

NSN

5961-00-190-1319

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

BLY50A

TRANSISTOR

NSN, MFG P/N

5961001901319

NSN

5961-00-190-1319

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BLY50A

TRANSISTOR

NSN, MFG P/N

5961001901319

NSN

5961-00-190-1319

MFG

RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP

1S7150A

DIODE,SPECIAL

NSN, MFG P/N

5961001901371

NSN

5961-00-190-1371

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1S7150A

DIODE,SPECIAL

NSN, MFG P/N

5961001901371

NSN

5961-00-190-1371

MFG

RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP

40-666-340

DIODE,SPECIAL

NSN, MFG P/N

5961001901371

NSN

5961-00-190-1371

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40-666-340

DIODE,SPECIAL

NSN, MFG P/N

5961001901371

NSN

5961-00-190-1371

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

40-666-6110

TRANSISTOR

NSN, MFG P/N

5961001901373

NSN

5961-00-190-1373

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40-666-6110

TRANSISTOR

NSN, MFG P/N

5961001901373

NSN

5961-00-190-1373

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

BCY89

TRANSISTOR

NSN, MFG P/N

5961001901373

NSN

5961-00-190-1373

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BCY89

TRANSISTOR

NSN, MFG P/N

5961001901373

NSN

5961-00-190-1373

MFG

BRITISH SAROZAL LTD

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

10329DAP

TRANSIPAD,SPECIAL

NSN, MFG P/N

5961001901430

NSN

5961-00-190-1430

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10329DAP

TRANSIPAD,SPECIAL

NSN, MFG P/N

5961001901430

NSN

5961-00-190-1430

MFG

MILROSS DISTRIBUTION UK LTD

30-754-531-02

TRANSIPAD,SPECIAL

NSN, MFG P/N

5961001901430

NSN

5961-00-190-1430

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30-754-531-02

TRANSIPAD,SPECIAL

NSN, MFG P/N

5961001901430

NSN

5961-00-190-1430

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

40-666-2056

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001901632

NSN

5961-00-190-1632

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40-666-2056

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001901632

NSN

5961-00-190-1632

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

A45B14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001901632

NSN

5961-00-190-1632

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A45B14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001901632

NSN

5961-00-190-1632

MFG

PAGE AEROSPACE LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

ZS90

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001901632

NSN

5961-00-190-1632

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ZS90

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001901632

NSN

5961-00-190-1632

MFG

SELEX SENSORS & AIRBORNE SYSTEMS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

MZ12T10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902931

NSN

5961-00-190-2931

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MZ12T10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902931

NSN

5961-00-190-2931

MFG

INTERNATIONAL RECTIFIER CO GB LTD

PSD599

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902931

NSN

5961-00-190-2931

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PSD599

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902931

NSN

5961-00-190-2931

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

DD4521

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902945

NSN

5961-00-190-2945

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DD4521

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902945

NSN

5961-00-190-2945

MFG

TRW AUTOMOTIVE

Description

CURRENT RATING PER CHARACTERISTIC: 230.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.394 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

N151091-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902945

NSN

5961-00-190-2945

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N151091-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001902945

NSN

5961-00-190-2945

MFG

GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 230.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.394 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

BR575BE

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961001902946

NSN

5961-00-190-2946

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BR575BE

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961001902946

NSN

5961-00-190-2946

MFG

G E C PLESSEY SEMICONDUCTORS LTD POWER DIV

Description

SEMICONDUCTOR DEVIC

N172822-7

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961001902946

NSN

5961-00-190-2946

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N172822-7

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961001902946

NSN

5961-00-190-2946

MFG

GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS