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5961-00-243-2194
20 Products
151-1028-00
TRANSISTOR
NSN, MFG P/N
5961002432194
NSN
5961-00-243-2194
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
90167
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
917AS700-34
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
928288-101
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
947307-7000
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
A3255911-1
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
JANTX2N3700
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
JANTX2N3700A
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
S16629
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
SG2097
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
X11B2169
TRANSISTOR
NSN, MFG P/N
5961002431649
NSN
5961-00-243-1649
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLL
Related Searches:
SA3109
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002431684
NSN
5961-00-243-1684
SA3109
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002431684
NSN
5961-00-243-1684
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.404 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
41251200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002431698
NSN
5961-00-243-1698
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
46266700
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002431700
NSN
5961-00-243-1700
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
17809000
TRANSISTOR
NSN, MFG P/N
5961002431709
NSN
5961-00-243-1709
MFG
CONTROL DATA SYSTEMS INC CONTRACTS DEPT
Description
DESIGN CONTROL REFERENCE: 17809000
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 34010
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
932063-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
932063-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SA2642
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
SA2642
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SD2712
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
SD2712
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SP11311
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
SP11311
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002431897
NSN
5961-00-243-1897
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
F2975
TRANSISTOR
NSN, MFG P/N
5961002432194
NSN
5961-00-243-2194
MFG
SOLITRON DEVICES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
