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5961-00-269-9053
20 Products
472-0422-002
TRANSISTOR
NSN, MFG P/N
5961002699053
NSN
5961-00-269-9053
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0422-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
472-0807-004
TRANSISTOR
NSN, MFG P/N
5961002699055
NSN
5961-00-269-9055
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0807-004
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
472-0594-004
TRANSISTOR
NSN, MFG P/N
5961002699056
NSN
5961-00-269-9056
MFG
JARVIS SUPPLY CO
Description
DESIGN CONTROL REFERENCE: 472-0594-004
MANUFACTURERS CODE: 04756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-1240-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699058
NSN
5961-00-269-9058
479-1240-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699058
NSN
5961-00-269-9058
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-1240-006
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0978-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699059
NSN
5961-00-269-9059
479-0978-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699059
NSN
5961-00-269-9059
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0978-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0418-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699064
NSN
5961-00-269-9064
479-0418-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699064
NSN
5961-00-269-9064
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0418-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0726-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699148
NSN
5961-00-269-9148
479-0726-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699148
NSN
5961-00-269-9148
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0726-020
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0418-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699149
NSN
5961-00-269-9149
479-0418-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699149
NSN
5961-00-269-9149
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0418-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0915-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699150
NSN
5961-00-269-9150
479-0915-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699150
NSN
5961-00-269-9150
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0915-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0972-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699154
NSN
5961-00-269-9154
479-0972-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699154
NSN
5961-00-269-9154
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0972-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0519-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699160
NSN
5961-00-269-9160
479-0519-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699160
NSN
5961-00-269-9160
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0519-003
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0977-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699165
NSN
5961-00-269-9165
479-0977-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699165
NSN
5961-00-269-9165
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0977-004
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
479-0900-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699167
NSN
5961-00-269-9167
479-0900-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002699167
NSN
5961-00-269-9167
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0900-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
916B007-1
ASSY,RECTIFIER CRYS
NSN, MFG P/N
5961002701111
NSN
5961-00-270-1111
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 916B007-1
GENERAL CHARACTERISTICS ITEM DESCRIPTION: ASSEMBLY COMPOSED OF A SEMICONDUCTOR,SPRING WASHER,RIVET AND TERMINAL
MANUFACTURERS CODE: 99167
THE MANUFACTURERS DATA:
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1N4117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002701218
NSN
5961-00-270-1218
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 850.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4117
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM NOMIN
Related Searches:
JAN1N4117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002701218
NSN
5961-00-270-1218
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 850.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4117
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM NOMIN
Related Searches:
1901-0582
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002701952
NSN
5961-00-270-1952
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
STB631
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002701952
NSN
5961-00-270-1952
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
C25637-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002702005
NSN
5961-00-270-2005
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
185SE346
TRANSISTOR
NSN, MFG P/N
5961002702038
NSN
5961-00-270-2038
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN