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5961-00-269-9053

20 Products

472-0422-002

TRANSISTOR

NSN, MFG P/N

5961002699053

NSN

5961-00-269-9053

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472-0422-002

TRANSISTOR

NSN, MFG P/N

5961002699053

NSN

5961-00-269-9053

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 472-0422-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

472-0807-004

TRANSISTOR

NSN, MFG P/N

5961002699055

NSN

5961-00-269-9055

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472-0807-004

TRANSISTOR

NSN, MFG P/N

5961002699055

NSN

5961-00-269-9055

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 472-0807-004
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

472-0594-004

TRANSISTOR

NSN, MFG P/N

5961002699056

NSN

5961-00-269-9056

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472-0594-004

TRANSISTOR

NSN, MFG P/N

5961002699056

NSN

5961-00-269-9056

MFG

JARVIS SUPPLY CO

Description

DESIGN CONTROL REFERENCE: 472-0594-004
MANUFACTURERS CODE: 04756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-1240-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699058

NSN

5961-00-269-9058

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479-1240-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699058

NSN

5961-00-269-9058

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-1240-006
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0978-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699059

NSN

5961-00-269-9059

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479-0978-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699059

NSN

5961-00-269-9059

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0978-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0418-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699064

NSN

5961-00-269-9064

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479-0418-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699064

NSN

5961-00-269-9064

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0418-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0726-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699148

NSN

5961-00-269-9148

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479-0726-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699148

NSN

5961-00-269-9148

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0726-020
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0418-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699149

NSN

5961-00-269-9149

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479-0418-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699149

NSN

5961-00-269-9149

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0418-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0915-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699150

NSN

5961-00-269-9150

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479-0915-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699150

NSN

5961-00-269-9150

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0915-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0972-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699154

NSN

5961-00-269-9154

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479-0972-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699154

NSN

5961-00-269-9154

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0972-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0519-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699160

NSN

5961-00-269-9160

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479-0519-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699160

NSN

5961-00-269-9160

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0519-003
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0977-004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699165

NSN

5961-00-269-9165

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479-0977-004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699165

NSN

5961-00-269-9165

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0977-004
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

479-0900-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699167

NSN

5961-00-269-9167

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479-0900-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002699167

NSN

5961-00-269-9167

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0900-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

916B007-1

ASSY,RECTIFIER CRYS

NSN, MFG P/N

5961002701111

NSN

5961-00-270-1111

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916B007-1

ASSY,RECTIFIER CRYS

NSN, MFG P/N

5961002701111

NSN

5961-00-270-1111

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

DESIGN CONTROL REFERENCE: 916B007-1
GENERAL CHARACTERISTICS ITEM DESCRIPTION: ASSEMBLY COMPOSED OF A SEMICONDUCTOR,SPRING WASHER,RIVET AND TERMINAL
MANUFACTURERS CODE: 99167
THE MANUFACTURERS DATA:

1N4117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701218

NSN

5961-00-270-1218

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1N4117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701218

NSN

5961-00-270-1218

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 850.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4117
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM NOMIN

JAN1N4117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701218

NSN

5961-00-270-1218

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JAN1N4117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701218

NSN

5961-00-270-1218

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 850.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4117
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM NOMIN

1901-0582

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701952

NSN

5961-00-270-1952

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1901-0582

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701952

NSN

5961-00-270-1952

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK

STB631

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701952

NSN

5961-00-270-1952

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STB631

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002701952

NSN

5961-00-270-1952

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK

C25637-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002702005

NSN

5961-00-270-2005

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C25637-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002702005

NSN

5961-00-270-2005

MFG

BOGUE ELECTRIC MANUFACTURING CO

Description

INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

185SE346

TRANSISTOR

NSN, MFG P/N

5961002702038

NSN

5961-00-270-2038

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185SE346

TRANSISTOR

NSN, MFG P/N

5961002702038

NSN

5961-00-270-2038

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN