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5961-00-306-4737

20 Products

1N4795B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003064737

NSN

5961-00-306-4737

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1N4795B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003064737

NSN

5961-00-306-4737

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CAPACITANCE RATING IN PICOFARADS: 39.0 NOMINAL
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

922-6090-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003064737

NSN

5961-00-306-4737

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922-6090-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003064737

NSN

5961-00-306-4737

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CAPACITANCE RATING IN PICOFARADS: 39.0 NOMINAL
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1N3818A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003065544

NSN

5961-00-306-5544

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1N3818A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003065544

NSN

5961-00-306-5544

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

0448170001

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

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0448170001

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

MFG

SUNAIR ELECTRONICS LLC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR

CD2826

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

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CD2826

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

MFG

ACRIAN INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR

PT-9780

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

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PT-9780

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR

SD1407-11

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

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SD1407-11

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003067232

NSN

5961-00-306-7232

MFG

STMICROELECTRONICS INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR

0448000008

TRANSISTOR

NSN, MFG P/N

5961003067233

NSN

5961-00-306-7233

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0448000008

TRANSISTOR

NSN, MFG P/N

5961003067233

NSN

5961-00-306-7233

MFG

SUNAIR ELECTRONICS LLC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

PC115A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003067305

NSN

5961-00-306-7305

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PC115A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003067305

NSN

5961-00-306-7305

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

DESIGN CONTROL REFERENCE: PC115A
MANUFACTURERS CODE: 01281
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

77D605602G001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961003070381

NSN

5961-00-307-0381

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77D605602G001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961003070381

NSN

5961-00-307-0381

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

MAJOR COMPONENTS: DIODE 68; PRINTED WIRING BOARD 1; MTG BRACKET 1
OVERALL DEPTH: 0.355 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 4.500 INCHES NOMINAL

200943-701

TRANSISTOR

NSN, MFG P/N

5961003070975

NSN

5961-00-307-0975

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200943-701

TRANSISTOR

NSN, MFG P/N

5961003070975

NSN

5961-00-307-0975

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.090 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE

2N3426

TRANSISTOR

NSN, MFG P/N

5961003070975

NSN

5961-00-307-0975

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2N3426

TRANSISTOR

NSN, MFG P/N

5961003070975

NSN

5961-00-307-0975

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.090 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE

226274-000

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070977

NSN

5961-00-307-0977

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226274-000

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070977

NSN

5961-00-307-0977

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, HORNET F/A-18
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226274-000
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; FOUR NO. 2-56 THD MTG HOLES ON 1.25 IN. BY 0.75 IN. MTG CENTERS

SD10978

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070977

NSN

5961-00-307-0977

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SD10978

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070977

NSN

5961-00-307-0977

MFG

SOLITRON DEVICES INC.

Description

III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, HORNET F/A-18
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226274-000
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; FOUR NO. 2-56 THD MTG HOLES ON 1.25 IN. BY 0.75 IN. MTG CENTERS

SDA195

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070977

NSN

5961-00-307-0977

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SDA195

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070977

NSN

5961-00-307-0977

MFG

SOLID STATE DEVICES INC.

Description

III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, HORNET F/A-18
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226274-000
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; FOUR NO. 2-56 THD MTG HOLES ON 1.25 IN. BY 0.75 IN. MTG CENTERS

226123-000

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070980

NSN

5961-00-307-0980

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226123-000

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070980

NSN

5961-00-307-0980

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226123-000
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.400 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE PHASE AC INPUT,FULL WAVE RECTIFICATION
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

C0DI5507

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070980

NSN

5961-00-307-0980

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C0DI5507

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070980

NSN

5961-00-307-0980

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226123-000
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.400 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE PHASE AC INPUT,FULL WAVE RECTIFICATION
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

226309-001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070983

NSN

5961-00-307-0983

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226309-001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070983

NSN

5961-00-307-0983

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-001
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION,TWO NO. 2-56 THD MTG HOLES SPACED 0.700 IN. CENTER TO CENTER

652-715

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070983

NSN

5961-00-307-0983

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652-715

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070983

NSN

5961-00-307-0983

MFG

MICRO USPD INC

Description

MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-001
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION,TWO NO. 2-56 THD MTG HOLES SPACED 0.700 IN. CENTER TO CENTER

K815-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070983

NSN

5961-00-307-0983

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K815-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003070983

NSN

5961-00-307-0983

MFG

SOLITRON DEVICES INC.

Description

MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-001
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION,TWO NO. 2-56 THD MTG HOLES SPACED 0.700 IN. CENTER TO CENTER