My Quote Request
5961-00-306-4737
20 Products
1N4795B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003064737
NSN
5961-00-306-4737
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CAPACITANCE RATING IN PICOFARADS: 39.0 NOMINAL
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
922-6090-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003064737
NSN
5961-00-306-4737
922-6090-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003064737
NSN
5961-00-306-4737
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 39.0 NOMINAL
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N3818A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003065544
NSN
5961-00-306-5544
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0448170001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003067232
NSN
5961-00-306-7232
MFG
SUNAIR ELECTRONICS LLC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR
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CD2826
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003067232
NSN
5961-00-306-7232
MFG
ACRIAN INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR
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PT-9780
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003067232
NSN
5961-00-306-7232
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR
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SD1407-11
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003067232
NSN
5961-00-306-7232
MFG
STMICROELECTRONICS INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC AND METAL ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL LENGTH: 0.725 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
TEST DATA DOCUMENT: 12338-44817-00 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR
Related Searches:
0448000008
TRANSISTOR
NSN, MFG P/N
5961003067233
NSN
5961-00-306-7233
MFG
SUNAIR ELECTRONICS LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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PC115A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003067305
NSN
5961-00-306-7305
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PC115A
MANUFACTURERS CODE: 01281
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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77D605602G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003070381
NSN
5961-00-307-0381
77D605602G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003070381
NSN
5961-00-307-0381
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
MAJOR COMPONENTS: DIODE 68; PRINTED WIRING BOARD 1; MTG BRACKET 1
OVERALL DEPTH: 0.355 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 4.500 INCHES NOMINAL
Related Searches:
200943-701
TRANSISTOR
NSN, MFG P/N
5961003070975
NSN
5961-00-307-0975
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.090 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE
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2N3426
TRANSISTOR
NSN, MFG P/N
5961003070975
NSN
5961-00-307-0975
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.090 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE
Related Searches:
226274-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070977
NSN
5961-00-307-0977
226274-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070977
NSN
5961-00-307-0977
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, HORNET F/A-18
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226274-000
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; FOUR NO. 2-56 THD MTG HOLES ON 1.25 IN. BY 0.75 IN. MTG CENTERS
Related Searches:
SD10978
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070977
NSN
5961-00-307-0977
SD10978
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070977
NSN
5961-00-307-0977
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, HORNET F/A-18
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226274-000
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; FOUR NO. 2-56 THD MTG HOLES ON 1.25 IN. BY 0.75 IN. MTG CENTERS
Related Searches:
SDA195
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070977
NSN
5961-00-307-0977
SDA195
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070977
NSN
5961-00-307-0977
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, HORNET F/A-18
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226274-000
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; FOUR NO. 2-56 THD MTG HOLES ON 1.25 IN. BY 0.75 IN. MTG CENTERS
Related Searches:
226123-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070980
NSN
5961-00-307-0980
226123-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070980
NSN
5961-00-307-0980
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226123-000
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.400 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE PHASE AC INPUT,FULL WAVE RECTIFICATION
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
C0DI5507
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070980
NSN
5961-00-307-0980
C0DI5507
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070980
NSN
5961-00-307-0980
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226123-000
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.400 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE PHASE AC INPUT,FULL WAVE RECTIFICATION
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
226309-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070983
NSN
5961-00-307-0983
226309-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070983
NSN
5961-00-307-0983
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-001
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION,TWO NO. 2-56 THD MTG HOLES SPACED 0.700 IN. CENTER TO CENTER
Related Searches:
652-715
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070983
NSN
5961-00-307-0983
652-715
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070983
NSN
5961-00-307-0983
MFG
MICRO USPD INC
Description
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-001
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION,TWO NO. 2-56 THD MTG HOLES SPACED 0.700 IN. CENTER TO CENTER
Related Searches:
K815-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070983
NSN
5961-00-307-0983
K815-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003070983
NSN
5961-00-307-0983
MFG
SOLITRON DEVICES INC.
Description
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-001
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION,TWO NO. 2-56 THD MTG HOLES SPACED 0.700 IN. CENTER TO CENTER