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5961-01-041-0285
20 Products
MAC77-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010410285
NSN
5961-01-041-0285
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: MAC77-5
MANUFACTURERS CODE: 04713
OVERALL HEIGHT: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
1860534-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010410286
NSN
5961-01-041-0286
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 1.50 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55972
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 1860534-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.687 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UZ727
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010410286
NSN
5961-01-041-0286
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 1.50 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55972
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 1860534-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.687 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
0N228114-1
TRANSISTOR
NSN, MFG P/N
5961010410602
NSN
5961-01-041-0602
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 0N228114-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: SOURCE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N228114-1 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.5 MAXI
Related Searches:
10029835-101
TRANSISTOR
NSN, MFG P/N
5961010410878
NSN
5961-01-041-0878
MFG
24 HOUR DISTRIBUTORS DBA SWARINGEN JR CHARLIE USE CAGE CODE 3WKM0 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: 10029835-101
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE 2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 12136
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
44098H
TRANSISTOR
NSN, MFG P/N
5961010411554
NSN
5961-01-041-1554
MFG
ACRIAN INC
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 50.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE,
~1: EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
8157100-2
TRANSISTOR
NSN, MFG P/N
5961010411554
NSN
5961-01-041-1554
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 50.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE,
~1: EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
C2M70-28R
TRANSISTOR
NSN, MFG P/N
5961010411554
NSN
5961-01-041-1554
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 50.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE,
~1: EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SD1468-H12
TRANSISTOR
NSN, MFG P/N
5961010411554
NSN
5961-01-041-1554
MFG
PRECISION FLOW DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 50.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE,
~1: EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1M36ZS10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411555
NSN
5961-01-041-1555
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
1N4753
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411555
NSN
5961-01-041-1555
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
03C05230B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
HEKIMIAN LABORATORIES INC CUSTOMER SUPPORT DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
10506008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
HENLEY MARINE INC SAN DIEGO OPNS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
1902-3087
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
1N5230A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
4803104-05230
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
4803104-05230
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
OCEAN APPLIED RESEARCH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
CD35615
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
DZ780131X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
JAN1N5230
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411556
NSN
5961-01-041-1556
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5522B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING I
Related Searches:
R4128-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010411911
NSN
5961-01-041-1911
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
