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5961-00-361-9483
20 Products
1686-787
TRANSISTOR
NSN, MFG P/N
5961003619483
NSN
5961-00-361-9483
MFG
WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
202769
TRANSISTOR
NSN, MFG P/N
5961003619483
NSN
5961-00-361-9483
MFG
WOODWARD GOVERNOR COMPANY DBA WOODWARD
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
202770
TRANSISTOR
NSN, MFG P/N
5961003619488
NSN
5961-00-361-9488
MFG
WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN B
Related Searches:
48P237462-21-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619554
NSN
5961-00-361-9554
48P237462-21-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619554
NSN
5961-00-361-9554
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.439 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TEST FREQUENCY 10000M
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
MA41202F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619554
NSN
5961-00-361-9554
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.439 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TEST FREQUENCY 10000M
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
2N3340
TRANSISTOR
NSN, MFG P/N
5961003619898
NSN
5961-00-361-9898
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4817 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN V
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1N5175
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003620111
NSN
5961-00-362-0111
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-27
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
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244-990071-223
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003620111
NSN
5961-00-362-0111
244-990071-223
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003620111
NSN
5961-00-362-0111
MFG
CMC ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-27
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RELEASE5699
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003620111
NSN
5961-00-362-0111
RELEASE5699
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003620111
NSN
5961-00-362-0111
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-27
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
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NTD05
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003622401
NSN
5961-00-362-2401
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
DESIGN CONTROL REFERENCE: NTD05
MANUFACTURERS CODE: 83701
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
ED8832
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003622437
NSN
5961-00-362-2437
ED8832
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003622437
NSN
5961-00-362-2437
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
DESIGN CONTROL REFERENCE: ED8832
MANUFACTURERS CODE: 83701
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
353-6569-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003626722
NSN
5961-00-362-6722
353-6569-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003626722
NSN
5961-00-362-6722
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 1.120 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 BINDING POST
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SCSF2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003626722
NSN
5961-00-362-6722
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 1.120 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 BINDING POST
Related Searches:
353-6577-010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003626726
NSN
5961-00-362-6726
353-6577-010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003626726
NSN
5961-00-362-6726
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 SOLDER STUD
Related Searches:
C159A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003626726
NSN
5961-00-362-6726
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 SOLDER STUD
Related Searches:
1N1203R
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003627861
NSN
5961-00-362-7861
1N1203R
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003627861
NSN
5961-00-362-7861
MFG
ST-SEMICON INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
DESIGN CONTROL REFERENCE: 1N1203R
MANUFACTURERS CODE: 51589
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:HERMETICALLY SEALED;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOLTAGE RATING:90.0
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 2 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
1N1203RA
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003627861
NSN
5961-00-362-7861
1N1203RA
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003627861
NSN
5961-00-362-7861
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
DESIGN CONTROL REFERENCE: 1N1203R
MANUFACTURERS CODE: 51589
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:HERMETICALLY SEALED;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOLTAGE RATING:90.0
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 2 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
MIS-18100/5B
TRANSISTOR
NSN, MFG P/N
5961003637459
NSN
5961-00-363-7459
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-18100/5B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
122723-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003647758
NSN
5961-00-364-7758
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
DESIGN CONTROL REFERENCE: 5082-2411
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1MY97
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
5082-2411
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003647758
NSN
5961-00-364-7758
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
DESIGN CONTROL REFERENCE: 5082-2411
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1MY97
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
