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5961-00-409-3638
20 Products
2N4043
TRANSISTOR
NSN, MFG P/N
5961004093638
NSN
5961-00-409-3638
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N5338BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
4114-623-00-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
4114-623-00-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
5800583-926100-560
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
5800583-926100-560
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
859872
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
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DZ251250
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093632
NSN
5961-00-409-3632
MFG
DRS TACTICAL SYSTEMS LTD DBA LYNWOOD
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N964
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093633
NSN
5961-00-409-3633
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
431703
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004093633
NSN
5961-00-409-3633
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N1721
TRANSISTOR
NSN, MFG P/N
5961004093634
NSN
5961-00-409-3634
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.772 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.442 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
454435
TRANSISTOR
NSN, MFG P/N
5961004093634
NSN
5961-00-409-3634
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.772 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.442 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N1990
TRANSISTOR
NSN, MFG P/N
5961004093635
NSN
5961-00-409-3635
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
431729
TRANSISTOR
NSN, MFG P/N
5961004093635
NSN
5961-00-409-3635
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N2907
TRANSISTOR
NSN, MFG P/N
5961004093636
NSN
5961-00-409-3636
MFG
TELCOM SEMICONDUCTOR INC
Description
TRANSISTOR
Related Searches:
3030008001
TRANSISTOR
NSN, MFG P/N
5961004093636
NSN
5961-00-409-3636
MFG
AAR BROOKS AND PERKINS CORP AERONETICS DIV
Description
TRANSISTOR
Related Searches:
5L5512-101-26
TRANSISTOR
NSN, MFG P/N
5961004093636
NSN
5961-00-409-3636
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
TRANSISTOR
Related Searches:
670283
TRANSISTOR
NSN, MFG P/N
5961004093636
NSN
5961-00-409-3636
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
TRANSISTOR
Related Searches:
2N3251A
TRANSISTOR
NSN, MFG P/N
5961004093637
NSN
5961-00-409-3637
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.490 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N3251AA
TRANSISTOR
NSN, MFG P/N
5961004093637
NSN
5961-00-409-3637
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.490 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
525079
TRANSISTOR
NSN, MFG P/N
5961004093637
NSN
5961-00-409-3637
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.490 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4043A
TRANSISTOR
NSN, MFG P/N
5961004093638
NSN
5961-00-409-3638
MFG
ADELCO ELEKTRONIK GMBH
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
