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5961-00-118-9968
20 Products
1N488A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001189968
NSN
5961-00-118-9968
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-3659-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001189968
NSN
5961-00-118-9968
353-3659-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001189968
NSN
5961-00-118-9968
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
Z1012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001191279
NSN
5961-00-119-1279
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1012
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1900366
TRANSISTOR
NSN, MFG P/N
5961001191413
NSN
5961-00-119-1413
MFG
RACAL SURVEY INC DIV OF RACAL DATA COMMUNICATIONS INC
Description
TRANSISTOR
Related Searches:
BFY19A
TRANSISTOR
NSN, MFG P/N
5961001191413
NSN
5961-00-119-1413
MFG
NORTEL
Description
TRANSISTOR
Related Searches:
0AZ241
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001191415
NSN
5961-00-119-1415
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1907042
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001191415
NSN
5961-00-119-1415
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
800-5000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001192575
NSN
5961-00-119-2575
800-5000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001192575
NSN
5961-00-119-2575
MFG
INFORMATION DISPLAYS INC
Description
MAJOR COMPONENTS: SEMICONDUCTOR 2; INFORMATION DISPLAYS 15; RESISTOR 4
Related Searches:
856622
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001192575
NSN
5961-00-119-2575
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
MAJOR COMPONENTS: SEMICONDUCTOR 2; INFORMATION DISPLAYS 15; RESISTOR 4
Related Searches:
C04-0030
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001192576
NSN
5961-00-119-2576
C04-0030
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001192576
NSN
5961-00-119-2576
MFG
INFORMATION DISPLAYS INC
Description
MAJOR COMPONENTS: IODE 23; MTG BOARD 1
Related Searches:
479-1167-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001192593
NSN
5961-00-119-2593
479-1167-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001192593
NSN
5961-00-119-2593
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 94756
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 479-1167-001
OPERATING TEMP RANGE: -55.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.370 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
SA1553
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001192593
NSN
5961-00-119-2593
SA1553
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001192593
NSN
5961-00-119-2593
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 94756
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 479-1167-001
OPERATING TEMP RANGE: -55.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.370 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
2N5918
TRANSISTOR
NSN, MFG P/N
5961001193345
NSN
5961-00-119-3345
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
DESIGN CONTROL REFERENCE: 352-0173-010
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
352-0173-010
TRANSISTOR
NSN, MFG P/N
5961001193345
NSN
5961-00-119-3345
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 352-0173-010
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
TA7231
TRANSISTOR
NSN, MFG P/N
5961001193345
NSN
5961-00-119-3345
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 352-0173-010
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
2N5916
TRANSISTOR
NSN, MFG P/N
5961001193346
NSN
5961-00-119-3346
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
DESIGN CONTROL REFERENCE: 352-0174-010
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
352-0174-010
TRANSISTOR
NSN, MFG P/N
5961001193346
NSN
5961-00-119-3346
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 352-0174-010
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
353-3674-010
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001193354
NSN
5961-00-119-3354
353-3674-010
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001193354
NSN
5961-00-119-3354
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND BRACKET
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.094 INCHES NOMINAL
OVERALL LENGTH: 1.875 INCHES NOMINAL
OVERALL WIDTH: 0.594 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
A1423NX45
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001193354
NSN
5961-00-119-3354
A1423NX45
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001193354
NSN
5961-00-119-3354
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND BRACKET
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.094 INCHES NOMINAL
OVERALL LENGTH: 1.875 INCHES NOMINAL
OVERALL WIDTH: 0.594 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA4163
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001193354
NSN
5961-00-119-3354
SA4163
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001193354
NSN
5961-00-119-3354
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND BRACKET
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.094 INCHES NOMINAL
OVERALL LENGTH: 1.875 INCHES NOMINAL
OVERALL WIDTH: 0.594 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
