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5961-00-410-5401

20 Products

910789-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105401

NSN

5961-00-410-5401

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910789-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105401

NSN

5961-00-410-5401

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3606

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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1N3606

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

1N4153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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1N4153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

1N4153A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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1N4153A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

MOMENTIVE PERFORMANCE MATERIALS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

353-9008-170

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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353-9008-170

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

4178600-459

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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4178600-459

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

JAN1N4153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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JAN1N4153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

JAN1N4153A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

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JAN1N4153A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004103985

NSN

5961-00-410-3985

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4153
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS

1N5465A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004104403

NSN

5961-00-410-4403

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1N5465A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004104403

NSN

5961-00-410-4403

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

99093878

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004104403

NSN

5961-00-410-4403

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99093878

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004104403

NSN

5961-00-410-4403

MFG

THALES

Description

CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

2N1808

TRANSISTOR

NSN, MFG P/N

5961004105074

NSN

5961-00-410-5074

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2N1808

TRANSISTOR

NSN, MFG P/N

5961004105074

NSN

5961-00-410-5074

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OP

DMS 76001B

TRANSISTOR

NSN, MFG P/N

5961004105074

NSN

5961-00-410-5074

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DMS 76001B

TRANSISTOR

NSN, MFG P/N

5961004105074

NSN

5961-00-410-5074

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OP

1N4720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105075

NSN

5961-00-410-5075

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1N4720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105075

NSN

5961-00-410-5075

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N4720A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105075

NSN

5961-00-410-5075

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1N4720A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105075

NSN

5961-00-410-5075

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

499-020-049

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105075

NSN

5961-00-410-5075

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499-020-049

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004105075

NSN

5961-00-410-5075

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

168-1016-003N

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

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168-1016-003N

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

MFG

GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 275.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 80.0 REVERSE VOLTAGE, TOTAL RMS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

18DB2A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

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18DB2A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 275.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 80.0 REVERSE VOLTAGE, TOTAL RMS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

2710019

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

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2710019

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

MFG

EIP MICROWAVE INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 275.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 80.0 REVERSE VOLTAGE, TOTAL RMS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

SS15154-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

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SS15154-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

MFG

SELEX COMMUNICATIONS LTD

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 275.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 80.0 REVERSE VOLTAGE, TOTAL RMS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

TCR10001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

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TCR10001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004105128

NSN

5961-00-410-5128

MFG

TELEPHONE SYSTEMS/COMMUNICATIONS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 275.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 80.0 REVERSE VOLTAGE, TOTAL RMS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD