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5961-00-476-8078

20 Products

15-25355-1

TRANSISTOR

NSN, MFG P/N

5961004768078

NSN

5961-00-476-8078

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15-25355-1

TRANSISTOR

NSN, MFG P/N

5961004768078

NSN

5961-00-476-8078

MFG

EMERGENCY BEACON CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5791 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

S16814

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

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S16814

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7900038-01
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, CO

SM2379A

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

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SM2379A

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7900038-01
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, CO

SM7154

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

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SM7154

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7900038-01
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, CO

TS2115

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

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TS2115

TRANSISTOR

NSN, MFG P/N

5961004767899

NSN

5961-00-476-7899

MFG

ITT SEMICONDUCTORS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7900038-01
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, CO

0N056748-1

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

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0N056748-1

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

MFG

NATIONAL SECURITY AGENCY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

38420

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

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38420

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

MFG

INTERSIL CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

B240028

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

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B240028

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

MFG

SOLITRON DEVICES INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

PP7648

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

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PP7648

TRANSISTOR

NSN, MFG P/N

5961004767967

NSN

5961-00-476-7967

MFG

MICROSEMI PPC INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

128C931H03

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004767976

NSN

5961-00-476-7976

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128C931H03

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004767976

NSN

5961-00-476-7976

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.190 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL L

5082-2932

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004767976

NSN

5961-00-476-7976

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5082-2932

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004767976

NSN

5961-00-476-7976

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.190 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL L

011-13009-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767981

NSN

5961-00-476-7981

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011-13009-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767981

NSN

5961-00-476-7981

MFG

ASTEC AMERICA INC POWERTEC POWER SUPPLIES DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4207 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1214-366

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767981

NSN

5961-00-476-7981

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1214-366

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767981

NSN

5961-00-476-7981

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4207 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N4063A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767981

NSN

5961-00-476-7981

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1N4063A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767981

NSN

5961-00-476-7981

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4207 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

HDS9102

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767983

NSN

5961-00-476-7983

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HDS9102

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004767983

NSN

5961-00-476-7983

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL

363A032H39

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004767985

NSN

5961-00-476-7985

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363A032H39

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004767985

NSN

5961-00-476-7985

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES MANUFACTURING INTEGRATION AND TESTING

10658392

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004768064

NSN

5961-00-476-8064

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10658392

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004768064

NSN

5961-00-476-8064

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

MATERIAL: COPPER ALLOY 360
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-B-626 ASSN STD SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED BASE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.375 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.410 INCHES MINIMUM AND 0.470 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
SPECIAL FEATURES: INTERNAL SPRING OR OTHER MEANS SHALL BE PROVIDED TO ASSURE ELECTRICAL CONTACT.
STYLE DESIGNATOR: 3C CYLINDRICAL
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-C-26074A MIL STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNEF SINGLE MOUNTING FACILITY

MA51738

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004768064

NSN

5961-00-476-8064

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MA51738

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961004768064

NSN

5961-00-476-8064

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

MATERIAL: COPPER ALLOY 360
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-B-626 ASSN STD SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED BASE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.375 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.410 INCHES MINIMUM AND 0.470 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
SPECIAL FEATURES: INTERNAL SPRING OR OTHER MEANS SHALL BE PROVIDED TO ASSURE ELECTRICAL CONTACT.
STYLE DESIGNATOR: 3C CYLINDRICAL
SURFACE TREATMENT: NICKEL
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-C-26074A MIL STD SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNEF SINGLE MOUNTING FACILITY

67A30A713

TRANSISTOR

NSN, MFG P/N

5961004768068

NSN

5961-00-476-8068

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67A30A713

TRANSISTOR

NSN, MFG P/N

5961004768068

NSN

5961-00-476-8068

MFG

NAVAL AIR SYSTEMS COMMAND

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

67A30A714

TRANSISTOR

NSN, MFG P/N

5961004768069

NSN

5961-00-476-8069

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67A30A714

TRANSISTOR

NSN, MFG P/N

5961004768069

NSN

5961-00-476-8069

MFG

NAVAL AIR SYSTEMS COMMAND

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD