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5961-00-499-7422
20 Products
G39015252
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997422
NSN
5961-00-499-7422
MFG
SPENCER INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G390152S2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997422
NSN
5961-00-499-7422
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
619324-1
TRANSISTOR
NSN, MFG P/N
5961004997430
NSN
5961-00-499-7430
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL HEIGHT: 0.060 INCHES NOMINAL
OVERALL LENGTH: 0.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
MA42142-510
TRANSISTOR
NSN, MFG P/N
5961004997430
NSN
5961-00-499-7430
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL HEIGHT: 0.060 INCHES NOMINAL
OVERALL LENGTH: 0.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
5SCBR05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004997473
NSN
5961-00-499-7473
5SCBR05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004997473
NSN
5961-00-499-7473
MFG
SEMTECH CORPORATION
Description
SPECIAL FEATURES: SILICON,SINGLE PHASE FULL WAVE BRIDGE,50V PEAK INVERSE VOLTAGE,38V RMS VOLTAGE,5.0 AMP AVERAGE RECTIFIED CURRENT AT 25 DEG C AND 3.0 AMP AT 100 DEG C,30 AMP RECURRENT SURGE CURRENT AT 25 DEG C,HERMETICALLY SEALED UNITS,MOLDED CASE,1.125 IN. DIA,0.250 IN.
~1: H,4 SOLDER STUD TYPE TERMINALS 0.210 IN. MAX H,TERMINALS EQUALLY SPACED ON 0.813 IN. DIA CIRCLE,0NE 0.169 IN. DIA UNTHREADED MTG HOLE THRU CENTER OF CASE,M55.0 TO P15.0 DEG C OPERATING TEMP;STORAGE TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELCIUS
Related Searches:
SCBR05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004997473
NSN
5961-00-499-7473
SCBR05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004997473
NSN
5961-00-499-7473
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SILICON,SINGLE PHASE FULL WAVE BRIDGE,50V PEAK INVERSE VOLTAGE,38V RMS VOLTAGE,5.0 AMP AVERAGE RECTIFIED CURRENT AT 25 DEG C AND 3.0 AMP AT 100 DEG C,30 AMP RECURRENT SURGE CURRENT AT 25 DEG C,HERMETICALLY SEALED UNITS,MOLDED CASE,1.125 IN. DIA,0.250 IN.
~1: H,4 SOLDER STUD TYPE TERMINALS 0.210 IN. MAX H,TERMINALS EQUALLY SPACED ON 0.813 IN. DIA CIRCLE,0NE 0.169 IN. DIA UNTHREADED MTG HOLE THRU CENTER OF CASE,M55.0 TO P15.0 DEG C OPERATING TEMP;STORAGE TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELCIUS
Related Searches:
353-3723-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997509
NSN
5961-00-499-7509
353-3723-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997509
NSN
5961-00-499-7509
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.196 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
STB707
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997509
NSN
5961-00-499-7509
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.196 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
26752143-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997767
NSN
5961-00-499-7767
26752143-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997767
NSN
5961-00-499-7767
MFG
THALES AVIONICS SA
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2675214340
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997767
NSN
5961-00-499-7767
2675214340
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997767
NSN
5961-00-499-7767
MFG
CROUZET AUTOMATISMES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PS1502A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997767
NSN
5961-00-499-7767
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4116
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997893
NSN
5961-00-499-7893
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
DESIGN CONTROL REFERENCE: 1N4116
MANUFACTURERS CODE: 80131
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N5142
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997896
NSN
5961-00-499-7896
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
DESIGN CONTROL REFERENCE: 1N5142
MANUFACTURERS CODE: 80131
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N5146
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997904
NSN
5961-00-499-7904
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5259 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
1N4573
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997907
NSN
5961-00-499-7907
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
DESIGN CONTROL REFERENCE: 1N4573
MANUFACTURERS CODE: 80131
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
GS810ES
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997907
NSN
5961-00-499-7907
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 1N4573
MANUFACTURERS CODE: 80131
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
0S015480
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997909
NSN
5961-00-499-7909
MFG
DIGITEC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4759
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997909
NSN
5961-00-499-7909
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4759A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997909
NSN
5961-00-499-7909
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
353-6481-630
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997909
NSN
5961-00-499-7909
353-6481-630
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997909
NSN
5961-00-499-7909
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
