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5961-00-138-1336
20 Products
1902-3086
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001381336
NSN
5961-00-138-1336
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.296 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.75 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ730818X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001381336
NSN
5961-00-138-1336
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.296 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.75 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ10939-90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001381336
NSN
5961-00-138-1336
SZ10939-90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001381336
NSN
5961-00-138-1336
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.296 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.75 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1855-0334
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
1855-0334
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); MISSILE, ALL-WEATHER ANTISHIP, HARPOON (AGM-84); OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; MISSILE, AIR-TO-AIR, PHOENIX (AIM-54); TARAWA CLASS LHA; TICONDEROGA CLASS CG (47); LOS ANGELES CLASS SSN (688); STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
~1: (637); FORRESTAL CLASS CV
Related Searches:
DN377
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); MISSILE, ALL-WEATHER ANTISHIP, HARPOON (AGM-84); OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; MISSILE, AIR-TO-AIR, PHOENIX (AIM-54); TARAWA CLASS LHA; TICONDEROGA CLASS CG (47); LOS ANGELES CLASS SSN (688); STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
~1: (637); FORRESTAL CLASS CV
Related Searches:
ITS3012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
ITS3012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); MISSILE, ALL-WEATHER ANTISHIP, HARPOON (AGM-84); OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; MISSILE, AIR-TO-AIR, PHOENIX (AIM-54); TARAWA CLASS LHA; TICONDEROGA CLASS CG (47); LOS ANGELES CLASS SSN (688); STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
~1: (637); FORRESTAL CLASS CV
Related Searches:
SFC0307
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
SFC0307
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382972
NSN
5961-00-138-2972
MFG
HALLIBURTON GEOPHYSICAL SERVICES INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); MISSILE, ALL-WEATHER ANTISHIP, HARPOON (AGM-84); OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; MISSILE, AIR-TO-AIR, PHOENIX (AIM-54); TARAWA CLASS LHA; TICONDEROGA CLASS CG (47); LOS ANGELES CLASS SSN (688); STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
~1: (637); FORRESTAL CLASS CV
Related Searches:
1853-0208
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382973
NSN
5961-00-138-2973
1853-0208
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382973
NSN
5961-00-138-2973
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 0.8 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
SD 2610
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382973
NSN
5961-00-138-2973
SD 2610
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001382973
NSN
5961-00-138-2973
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 0.8 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
10514-8454
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001382974
NSN
5961-00-138-2974
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
Related Searches:
2N5013
TRANSISTOR
NSN, MFG P/N
5961001383350
NSN
5961-00-138-3350
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5461 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLE
Related Searches:
A1187882
TRANSISTOR
NSN, MFG P/N
5961001383350
NSN
5961-00-138-3350
MFG
THALES AVIONICS SA
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5461 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLE
Related Searches:
1N4977
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001383364
NSN
5961-00-138-3364
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 76.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4977
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.1 MAXI
Related Searches:
JAN1N4977
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001383364
NSN
5961-00-138-3364
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 76.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4977
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.1 MAXI
Related Searches:
JAN1N4977A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001383364
NSN
5961-00-138-3364
JAN1N4977A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001383364
NSN
5961-00-138-3364
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 76.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4977
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.1 MAXI
Related Searches:
941-034-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001384229
NSN
5961-00-138-4229
941-034-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001384229
NSN
5961-00-138-4229
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-034-0001
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
215-37561-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001384923
NSN
5961-00-138-4923
215-37561-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001384923
NSN
5961-00-138-4923
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
2N3349
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001384923
NSN
5961-00-138-4923
2N3349
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001384923
NSN
5961-00-138-4923
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
AK0823750
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001384923
NSN
5961-00-138-4923
AK0823750
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001384923
NSN
5961-00-138-4923
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
12-100032
TRANSISTOR
NSN, MFG P/N
5961001384946
NSN
5961-00-138-4946
MFG
CHARLES INDUSTRIES LTD DIV TELECOM/MARINE AND INDUSTRIAL GROUP
Description
DESIGN CONTROL REFERENCE: 12-100032
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 74861
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
