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5961-00-296-1646
20 Products
1141273PC3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
1141273PC3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.247 INCHES MINIMUM AND 0.254 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1146 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JHP124-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002955757
NSN
5961-00-295-5757
JHP124-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002955757
NSN
5961-00-295-5757
MFG
HOLLINGSWORTH JOHN R CO
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
RELEASE 5729
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002955757
NSN
5961-00-295-5757
RELEASE 5729
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002955757
NSN
5961-00-295-5757
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
1N27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002957653
NSN
5961-00-295-7653
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N27
MANUFACTURERS CODE: 81350
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
Related Searches:
MP3602
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002958414
NSN
5961-00-295-8414
MFG
HUG C J CO INC
Description
DESIGN CONTROL REFERENCE: MP3602
MANUFACTURERS CODE: 74660
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N67A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960159
NSN
5961-00-296-0159
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-0147-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960159
NSN
5961-00-296-0159
353-0147-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960159
NSN
5961-00-296-0159
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
8024445
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960159
NSN
5961-00-296-0159
MFG
ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SMA189595
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960159
NSN
5961-00-296-0159
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2076
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960162
NSN
5961-00-296-0162
MFG
ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV
Description
DESIGN CONTROL REFERENCE: HD2135
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
666068-459
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960162
NSN
5961-00-296-0162
666068-459
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960162
NSN
5961-00-296-0162
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
DESIGN CONTROL REFERENCE: HD2135
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD2135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960162
NSN
5961-00-296-0162
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD2135
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960503
NSN
5961-00-296-0503
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
DESIGN CONTROL REFERENCE: 1N92
MANUFACTURERS CODE: 80131
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960503
NSN
5961-00-296-0503
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
DESIGN CONTROL REFERENCE: 1N92
MANUFACTURERS CODE: 80131
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
6104-3227492
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960503
NSN
5961-00-296-0503
6104-3227492
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960503
NSN
5961-00-296-0503
MFG
NAVAL SHIP SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 1N92
MANUFACTURERS CODE: 80131
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
6174902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002960503
NSN
5961-00-296-0503
MFG
BOFORS AB
Description
DESIGN CONTROL REFERENCE: 1N92
MANUFACTURERS CODE: 80131
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N93
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.247 INCHES MINIMUM AND 0.254 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1146 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-0201-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
353-0201-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.247 INCHES MINIMUM AND 0.254 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1146 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
694037-123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
694037-123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.247 INCHES MINIMUM AND 0.254 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1146 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
9101536
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002961646
NSN
5961-00-296-1646
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.247 INCHES MINIMUM AND 0.254 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1146 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
