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5961-00-556-9573

20 Products

1N1131

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569573

NSN

5961-00-556-9573

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1N1131

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569573

NSN

5961-00-556-9573

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 895083ALT1
MANUFACTURERS CODE: 06141
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

895083ALT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569573

NSN

5961-00-556-9573

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895083ALT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569573

NSN

5961-00-556-9573

MFG

L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION

Description

DESIGN CONTROL REFERENCE: 895083ALT1
MANUFACTURERS CODE: 06141
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N248

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569686

NSN

5961-00-556-9686

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1N248

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569686

NSN

5961-00-556-9686

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N248 TYPE
SEMICONDUCTOR MATERIAL: SILICON

L216826-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569686

NSN

5961-00-556-9686

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L216826-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569686

NSN

5961-00-556-9686

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N248 TYPE
SEMICONDUCTOR MATERIAL: SILICON

1N562

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569688

NSN

5961-00-556-9688

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1N562

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005569688

NSN

5961-00-556-9688

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1668 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

1623870-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961005570083

NSN

5961-00-557-0083

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1623870-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961005570083

NSN

5961-00-557-0083

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.000 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 1623870-1
MANUFACTURERS CODE: 10001
MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 25.0 DEG CELSIUS
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL LENGTH: 0.620 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
THE MANUFACTURERS DATA:

581R445H01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005571685

NSN

5961-00-557-1685

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581R445H01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005571685

NSN

5961-00-557-1685

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.620 INCHES NOMINAL
OVERALL WIDTH: 0.420 INCHES NOMINAL

K526-6

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005571685

NSN

5961-00-557-1685

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K526-6

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005571685

NSN

5961-00-557-1685

MFG

SOLITRON DEVICES INC.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.620 INCHES NOMINAL
OVERALL WIDTH: 0.420 INCHES NOMINAL

581R674H02

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961005571699

NSN

5961-00-557-1699

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581R674H02

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961005571699

NSN

5961-00-557-1699

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 581R674H02
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: CONNECTED PNP POWER TRANSISTORS
THE MANUFACTURERS DATA:

SJ3873H

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961005571699

NSN

5961-00-557-1699

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SJ3873H

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961005571699

NSN

5961-00-557-1699

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 581R674H02
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: CONNECTED PNP POWER TRANSISTORS
THE MANUFACTURERS DATA:

73549

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005573702

NSN

5961-00-557-3702

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73549

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005573702

NSN

5961-00-557-3702

MFG

PRESTOLITE ELECTRIC INCORPORATED

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

A051 073549

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005573702

NSN

5961-00-557-3702

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A051 073549

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005573702

NSN

5961-00-557-3702

MFG

PRESTOLITE ELECTRIC INC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

A26040-14-23

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005573702

NSN

5961-00-557-3702

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A26040-14-23

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005573702

NSN

5961-00-557-3702

MFG

TIFFIN PARTS L.L.C. DIV SUBSIDIARY OF PETTIBONE CORP.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N70A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575032

NSN

5961-00-557-5032

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1N70A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575032

NSN

5961-00-557-5032

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: IN70A TYPE
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

353-0251-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575032

NSN

5961-00-557-5032

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353-0251-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575032

NSN

5961-00-557-5032

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: IN70A TYPE
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1N76

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575273

NSN

5961-00-557-5273

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1N76

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575273

NSN

5961-00-557-5273

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.221 INCHES NOMINAL
OVERALL LENGTH: 0.765 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1318 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.147 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

SMB650891

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575273

NSN

5961-00-557-5273

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SMB650891

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575273

NSN

5961-00-557-5273

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.221 INCHES NOMINAL
OVERALL LENGTH: 0.765 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1318 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.147 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

013-034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575617

NSN

5961-00-557-5617

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013-034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575617

NSN

5961-00-557-5617

MFG

AMPEX SYSTEMS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N456 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N456

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575617

NSN

5961-00-557-5617

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1N456

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575617

NSN

5961-00-557-5617

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N456 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

221128

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575617

NSN

5961-00-557-5617

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221128

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005575617

NSN

5961-00-557-5617

MFG

RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N456 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD