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5961-00-070-8887

20 Products

13211E6947

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

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13211E6947

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

MFG

CECOM LR CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK

305P315

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

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305P315

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

MFG

ONAN CORPORATION DBA CUMMINS POWER GENERATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK

30C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

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30C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

MFG

ST-SEMICON INC

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK

500MA200PRV

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

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500MA200PRV

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000708887

NSN

5961-00-070-8887

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N978B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000709612

NSN

5961-00-070-9612

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1N978B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000709612

NSN

5961-00-070-9612

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N978B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

632788-117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000709612

NSN

5961-00-070-9612

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632788-117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000709612

NSN

5961-00-070-9612

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N978B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3563

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710260

NSN

5961-00-071-0260

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1N3563

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710260

NSN

5961-00-071-0260

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

3510053-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710260

NSN

5961-00-071-0260

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3510053-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710260

NSN

5961-00-071-0260

MFG

COHU INC. DBA COHU ELECTRONICS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3756

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

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1N3756

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.13 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.430 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.460 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3756A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

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1N3756A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 0.13 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.430 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.460 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

235382

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

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235382

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

MFG

RCA CORP GOVERNMENT AND COMMERCIAL SYSTEMS COMMERCIAL COMMICATIONS SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 0.13 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.430 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.460 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

846154

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

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846154

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000710261

NSN

5961-00-071-0261

MFG

L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 0.13 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.430 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.460 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

1854-0008

TRANSISTOR

NSN, MFG P/N

5961000710721

NSN

5961-00-071-0721

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1854-0008

TRANSISTOR

NSN, MFG P/N

5961000710721

NSN

5961-00-071-0721

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS

Description

DESIGN CONTROL REFERENCE: 1854-0008
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 1MY97
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

4592796G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961000711423

NSN

5961-00-071-1423

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4592796G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961000711423

NSN

5961-00-071-1423

MFG

ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST

Description

DESIGN CONTROL REFERENCE: 4592796G1
MANUFACTURERS CODE: 28528
OVERALL DIAMETER: 0.398 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
THE MANUFACTURERS DATA:

4592796G2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961000711424

NSN

5961-00-071-1424

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4592796G2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961000711424

NSN

5961-00-071-1424

MFG

ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST

Description

DESIGN CONTROL REFERENCE: 4592796G2
MANUFACTURERS CODE: 28528
OVERALL DIAMETER: 0.398 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
THE MANUFACTURERS DATA:

A65413

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711459

NSN

5961-00-071-1459

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A65413

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711459

NSN

5961-00-071-1459

MFG

POWER DESIGNS INC

GI580

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711459

NSN

5961-00-071-1459

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GI580

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711459

NSN

5961-00-071-1459

MFG

ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS

TS580

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711459

NSN

5961-00-071-1459

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TS580

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711459

NSN

5961-00-071-1459

MFG

ELECTRONIC DEVICES INC DBA E D I

B60001-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711461

NSN

5961-00-071-1461

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B60001-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711461

NSN

5961-00-071-1461

MFG

POWER DESIGNS INC

Description

DESIGN CONTROL REFERENCE: PS6892
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

PS6892

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711461

NSN

5961-00-071-1461

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PS6892

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000711461

NSN

5961-00-071-1461

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

DESIGN CONTROL REFERENCE: PS6892
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: