My Quote Request
No products added yet
5961-00-577-6218
20 Products
1N589
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005776218
NSN
5961-00-577-6218
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N589 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N1301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005776247
NSN
5961-00-577-6247
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MT600S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005780895
NSN
5961-00-578-0895
MT600S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005780895
NSN
5961-00-578-0895
MFG
MICROSEMI CORP-COLORADO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.000 AMPERES PEAK POINT CURRENT
DESIGN CONTROL REFERENCE: MT600S
MANUFACTURERS CODE: 59377
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
VT600S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005780895
NSN
5961-00-578-0895
VT600S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005780895
NSN
5961-00-578-0895
MFG
ELETRO-MECHANICAL INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.000 AMPERES PEAK POINT CURRENT
DESIGN CONTROL REFERENCE: MT600S
MANUFACTURERS CODE: 59377
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
1N1083
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781116
NSN
5961-00-578-1116
MFG
ST-SEMICON INC
Description
DESIGN CONTROL REFERENCE: 1N1083
MANUFACTURERS CODE: 51589
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
Related Searches:
2058678
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781142
NSN
5961-00-578-1142
MFG
ITT CORPORATION
Description
DESIGN CONTROL REFERENCE: S132G
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99872
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
S132G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781142
NSN
5961-00-578-1142
MFG
ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV
Description
DESIGN CONTROL REFERENCE: S132G
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99872
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
208555-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781143
NSN
5961-00-578-1143
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
DESIGN CONTROL REFERENCE: S6G
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99872
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
S6G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781143
NSN
5961-00-578-1143
MFG
ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV
Description
DESIGN CONTROL REFERENCE: S6G
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99872
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N539A
TRANSISTOR
NSN, MFG P/N
5961005781268
NSN
5961-00-578-1268
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.537 INCHES MINIMUM AND 0.547 INCHES MAXIMUM
OVERALL HEIGHT: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: SUPPLIED WITH A MATING MICA WASHER; INSULATING BUSHING AND HEX NUT; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 73030-525557 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 28.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
525557
TRANSISTOR
NSN, MFG P/N
5961005781268
NSN
5961-00-578-1268
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.537 INCHES MINIMUM AND 0.547 INCHES MAXIMUM
OVERALL HEIGHT: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: SUPPLIED WITH A MATING MICA WASHER; INSULATING BUSHING AND HEX NUT; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 73030-525557 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 28.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
JAN2N539A
TRANSISTOR
NSN, MFG P/N
5961005781268
NSN
5961-00-578-1268
MFG
GPD OPTOELECTRONICS CORP.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.537 INCHES MINIMUM AND 0.547 INCHES MAXIMUM
OVERALL HEIGHT: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: SUPPLIED WITH A MATING MICA WASHER; INSULATING BUSHING AND HEX NUT; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 73030-525557 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 28.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
518263-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781272
NSN
5961-00-578-1272
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 518263-18
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 73030
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
814132
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781475
NSN
5961-00-578-1475
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RTF-383
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781475
NSN
5961-00-578-1475
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
332056
TRANSISTOR
NSN, MFG P/N
5961005781644
NSN
5961-00-578-1644
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.359 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
H3A
TRANSISTOR
NSN, MFG P/N
5961005781644
NSN
5961-00-578-1644
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.359 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
1N628
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005781699
NSN
5961-00-578-1699
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 1N628
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N426
TRANSISTOR
NSN, MFG P/N
5961005781724
NSN
5961-00-578-1724
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2014 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
332054
TRANSISTOR
NSN, MFG P/N
5961005781724
NSN
5961-00-578-1724
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2014 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
