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5961-00-615-5187

20 Products

1N1141

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155187

NSN

5961-00-615-5187

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1N1141

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155187

NSN

5961-00-615-5187

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE

232-1160P2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155187

NSN

5961-00-615-5187

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232-1160P2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155187

NSN

5961-00-615-5187

MFG

RAYTHEON CO EQUIPMENT DEVELOPMENT LAB

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE

1N1319

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155197

NSN

5961-00-615-5197

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1N1319

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155197

NSN

5961-00-615-5197

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: IN1319 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

10046488

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155199

NSN

5961-00-615-5199

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10046488

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155199

NSN

5961-00-615-5199

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1930 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N1138

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155199

NSN

5961-00-615-5199

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1N1138

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155199

NSN

5961-00-615-5199

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1930 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, PEAK

232-1160P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155199

NSN

5961-00-615-5199

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232-1160P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155199

NSN

5961-00-615-5199

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1930 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N2040

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155232

NSN

5961-00-615-5232

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1N2040

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155232

NSN

5961-00-615-5232

MFG

ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV

Description

DESIGN CONTROL REFERENCE: SV824
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SV824

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155232

NSN

5961-00-615-5232

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SV824

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155232

NSN

5961-00-615-5232

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: SV824
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N1369A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155234

NSN

5961-00-615-5234

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1N1369A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155234

NSN

5961-00-615-5234

MFG

N A P SMD TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 155.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

348B18998-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155234

NSN

5961-00-615-5234

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348B18998-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155234

NSN

5961-00-615-5234

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 155.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

232-1163P7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155237

NSN

5961-00-615-5237

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232-1163P7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155237

NSN

5961-00-615-5237

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM REVERSE VOLTAGE, PEAK

303G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155237

NSN

5961-00-615-5237

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303G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155237

NSN

5961-00-615-5237

MFG

WESTINGHOUSE ELECTRIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N1365

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155524

NSN

5961-00-615-5524

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1N1365

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155524

NSN

5961-00-615-5524

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1365 TYPE
SEMICONDUCTOR MATERIAL: SILICON

1N1145

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155548

NSN

5961-00-615-5548

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1N1145

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155548

NSN

5961-00-615-5548

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.810 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1930 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7200.0 MAXIMUM REVERSE VOLTAGE, PEAK

596155548

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155548

NSN

5961-00-615-5548

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596155548

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155548

NSN

5961-00-615-5548

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 0.06 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.590 INCHES NOMINAL
OVERALL LENGTH: 1.810 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1930 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.590 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7200.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N563

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155549

NSN

5961-00-615-5549

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1N563

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155549

NSN

5961-00-615-5549

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N563 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

074-20017-019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

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074-20017-019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

MFG

LH ENTERPRISE

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N21WE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/232
OVERALL DIAMETER: 0.246 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.358 INCHES MINIMUM AND 0.364 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION

167579-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

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167579-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N21WE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/232
OVERALL DIAMETER: 0.246 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.358 INCHES MINIMUM AND 0.364 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION

1N157

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

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1N157

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N21WE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/232
OVERALL DIAMETER: 0.246 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.358 INCHES MINIMUM AND 0.364 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION

1N21WE

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

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1N21WE

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006155550

NSN

5961-00-615-5550

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N21WE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/232
OVERALL DIAMETER: 0.246 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.358 INCHES MINIMUM AND 0.364 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION