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5961-00-679-1782
20 Products
9063294
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006791782
NSN
5961-00-679-1782
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
S6G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006791782
NSN
5961-00-679-1782
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006791805
NSN
5961-00-679-1805
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
322-1093P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006791805
NSN
5961-00-679-1805
322-1093P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006791805
NSN
5961-00-679-1805
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
9166147
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006791805
NSN
5961-00-679-1805
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
26-825
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791808
NSN
5961-00-679-1808
26-825
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791808
NSN
5961-00-679-1808
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 36.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 508C540G86
MANUFACTURERS CODE: 05277
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 3.250 INCHES NOMINAL
OVERALL LENGTH: 4.125 INCHES NOMINAL
OVERALL WIDTH: 3.250 INCHES NOMINAL
SPECIAL FEATURES: FOUR 0.218 IN.BY 0.468 IN.MTG SLOTS ON 1.000 IN.BY 5.000 IN.MTG CENTERS;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOTAGE:28.0;TERMINAL TYPE AND QTY:BUS BAR 2 AND BRACKET 3
THE MANUFACTURERS DATA:
Related Searches:
508C540G86
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791808
NSN
5961-00-679-1808
508C540G86
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791808
NSN
5961-00-679-1808
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 36.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 508C540G86
MANUFACTURERS CODE: 05277
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 3.250 INCHES NOMINAL
OVERALL LENGTH: 4.125 INCHES NOMINAL
OVERALL WIDTH: 3.250 INCHES NOMINAL
SPECIAL FEATURES: FOUR 0.218 IN.BY 0.468 IN.MTG SLOTS ON 1.000 IN.BY 5.000 IN.MTG CENTERS;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOTAGE:28.0;TERMINAL TYPE AND QTY:BUS BAR 2 AND BRACKET 3
THE MANUFACTURERS DATA:
Related Searches:
9073135
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791808
NSN
5961-00-679-1808
9073135
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791808
NSN
5961-00-679-1808
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 36.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 508C540G86
MANUFACTURERS CODE: 05277
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 3.250 INCHES NOMINAL
OVERALL LENGTH: 4.125 INCHES NOMINAL
OVERALL WIDTH: 3.250 INCHES NOMINAL
SPECIAL FEATURES: FOUR 0.218 IN.BY 0.468 IN.MTG SLOTS ON 1.000 IN.BY 5.000 IN.MTG CENTERS;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOTAGE:28.0;TERMINAL TYPE AND QTY:BUS BAR 2 AND BRACKET 3
THE MANUFACTURERS DATA:
Related Searches:
4JA411CF2ADI
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
4JA411CF2ADI
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;420.0 VOLTS RMS INPUT;592.0 PEAK INVERSE VOLTS;576.0 VOLTS DC OUTPUT
Related Searches:
4JA4IICF2ADI
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
4JA4IICF2ADI
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
MFG
GENERAL ELECTRIC CO
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;420.0 VOLTS RMS INPUT;592.0 PEAK INVERSE VOLTS;576.0 VOLTS DC OUTPUT
Related Searches:
508C588G03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
508C588G03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
MFG
POWEREX INC
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;420.0 VOLTS RMS INPUT;592.0 PEAK INVERSE VOLTS;576.0 VOLTS DC OUTPUT
Related Searches:
66-4242
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
66-4242
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;420.0 VOLTS RMS INPUT;592.0 PEAK INVERSE VOLTS;576.0 VOLTS DC OUTPUT
Related Searches:
9073444
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
9073444
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;420.0 VOLTS RMS INPUT;592.0 PEAK INVERSE VOLTS;576.0 VOLTS DC OUTPUT
Related Searches:
STR444
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
STR444
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006791861
NSN
5961-00-679-1861
MFG
SYNTAR INDUSTRIES INC
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;420.0 VOLTS RMS INPUT;592.0 PEAK INVERSE VOLTS;576.0 VOLTS DC OUTPUT
Related Searches:
9026494
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791862
NSN
5961-00-679-1862
9026494
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791862
NSN
5961-00-679-1862
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 2.437 INCHES NOMINAL
OVERALL LENGTH: 5.500 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
TD8BIC2AI
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791862
NSN
5961-00-679-1862
TD8BIC2AI
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006791862
NSN
5961-00-679-1862
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 2.437 INCHES NOMINAL
OVERALL LENGTH: 5.500 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
05-901302
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006792158
NSN
5961-00-679-2158
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.415 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
8084180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006792158
NSN
5961-00-679-2158
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.415 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
SV2015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006792158
NSN
5961-00-679-2158
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.415 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
2N328
TRANSISTOR
NSN, MFG P/N
5961006793592
NSN
5961-00-679-3592
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 2N328
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 94144
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
