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5961-00-238-3589
20 Products
151-0327-00
TRANSISTOR
NSN, MFG P/N
5961002383589
NSN
5961-00-238-3589
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
VAT15ET
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382938
NSN
5961-00-238-2938
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA CPI DIV BEVERLY MICROWAVE DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES NOMINAL
OVERALL LENGTH: 0.240 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
01415-21202
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002382969
NSN
5961-00-238-2969
01415-21202
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002382969
NSN
5961-00-238-2969
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
MATERIAL: COPPER ALLOY
Related Searches:
01415-25201
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002382970
NSN
5961-00-238-2970
01415-25201
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002382970
NSN
5961-00-238-2970
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
MATERIAL: PLASTIC
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
Related Searches:
580R147H07
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382977
NSN
5961-00-238-2977
580R147H07
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382977
NSN
5961-00-238-2977
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: CLIP
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
D5899-6-5899-83
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382977
NSN
5961-00-238-2977
D5899-6-5899-83
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382977
NSN
5961-00-238-2977
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: CLIP
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
M02713
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382977
NSN
5961-00-238-2977
MFG
SKYWORKS SOLUTIONS INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: CLIP
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
MA4913C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382977
NSN
5961-00-238-2977
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: CLIP
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
580R147H08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382978
NSN
5961-00-238-2978
580R147H08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382978
NSN
5961-00-238-2978
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
D5899R6-5899-82
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382978
NSN
5961-00-238-2978
D5899R6-5899-82
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382978
NSN
5961-00-238-2978
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
M02713R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382978
NSN
5961-00-238-2978
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
MA4913CR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382978
NSN
5961-00-238-2978
MFG
SEMI-GENERAL INC .
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 CONNECTOR, COAXIAL
Related Searches:
39034800
TRANSISTOR
NSN, MFG P/N
5961002382986
NSN
5961-00-238-2986
MFG
CONTROL DATA CORP ROSEVILLE OPNS TERMINALS AND SMALL SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC_!
Related Searches:
11801200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002382994
NSN
5961-00-238-2994
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
11802900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383000
NSN
5961-00-238-3000
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
DESIGN CONTROL REFERENCE: 11802900
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 59661
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
24561603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383005
NSN
5961-00-238-3005
MFG
CONTROL DATA SYSTEMS INC CONTRACTS DEPT
Description
DESIGN CONTROL REFERENCE: 24561603
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 34010
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
1N1183RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383011
NSN
5961-00-238-3011
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
DESIGN CONTROL REFERENCE: 24561604
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 59661
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
24561604
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383011
NSN
5961-00-238-3011
MFG
CONTROL DATA SYSTEMS INC CONTRACTS DEPT
Description
DESIGN CONTROL REFERENCE: 24561604
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 59661
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
24561900
TRANSISTOR
NSN, MFG P/N
5961002383012
NSN
5961-00-238-3012
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
DESIGN CONTROL REFERENCE: 24561900
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 59661
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
24562100
TRANSISTOR
NSN, MFG P/N
5961002383013
NSN
5961-00-238-3013
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
DESIGN CONTROL REFERENCE: 24562100
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 59661
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
