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5961-00-787-5305

20 Products

1261915-57

TRANSISTOR

NSN, MFG P/N

5961007875305

NSN

5961-00-787-5305

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1261915-57

TRANSISTOR

NSN, MFG P/N

5961007875305

NSN

5961-00-787-5305

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER BENDIX NAVIGATION AND CONTROL SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N718A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/181
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/181 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL_!!

TM28

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873605

NSN

5961-00-787-3605

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TM28

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873605

NSN

5961-00-787-3605

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: 1116880-1REVD
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 64547
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

152-0152-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873672

NSN

5961-00-787-3672

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152-0152-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873672

NSN

5961-00-787-3672

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

DESIGN CONTROL REFERENCE: 152-0446-00
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80009
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.101 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:

152-0446-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873672

NSN

5961-00-787-3672

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152-0446-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873672

NSN

5961-00-787-3672

MFG

ELECTROLUX HOME PRODUCTS INC.

Description

DESIGN CONTROL REFERENCE: 152-0446-00
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80009
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.101 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:

007-T-6105-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873732

NSN

5961-00-787-3732

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007-T-6105-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873732

NSN

5961-00-787-3732

MFG

SELEX GALILEO LTD

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 150.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

1901-1067

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873732

NSN

5961-00-787-3732

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1901-1067

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873732

NSN

5961-00-787-3732

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 150.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

FDH4114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873732

NSN

5961-00-787-3732

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FDH4114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007873732

NSN

5961-00-787-3732

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 150.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

1902-0244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874343

NSN

5961-00-787-4343

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1902-0244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874343

NSN

5961-00-787-4343

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 8.30 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ720831B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874343

NSN

5961-00-787-4343

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DZ720831B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874343

NSN

5961-00-787-4343

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 8.30 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ11213-278

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874343

NSN

5961-00-787-4343

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SZ11213-278

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874343

NSN

5961-00-787-4343

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 8.30 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.131 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

1902-3301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

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1902-3301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: S-3B VIKING, F-14 TOMCAT AIRCRAFT. B-52, B-1 AIRCRAFT SUPPORT EQUIPMENT. STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT. LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
~1: (637).

CD35862

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

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CD35862

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

MFG

TELCOM SEMICONDUCTOR INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: S-3B VIKING, F-14 TOMCAT AIRCRAFT. B-52, B-1 AIRCRAFT SUPPORT EQUIPMENT. STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT. LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
~1: (637).

DZ730825W

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

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DZ730825W

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

MFG

SIEMENS CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: S-3B VIKING, F-14 TOMCAT AIRCRAFT. B-52, B-1 AIRCRAFT SUPPORT EQUIPMENT. STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT. LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
~1: (637).

FZ7312

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

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FZ7312

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: S-3B VIKING, F-14 TOMCAT AIRCRAFT. B-52, B-1 AIRCRAFT SUPPORT EQUIPMENT. STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT. LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
~1: (637).

SZ10939-338

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

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SZ10939-338

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007874632

NSN

5961-00-787-4632

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: S-3B VIKING, F-14 TOMCAT AIRCRAFT. B-52, B-1 AIRCRAFT SUPPORT EQUIPMENT. STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT. LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
~1: (637).

2N293

TRANSISTOR

NSN, MFG P/N

5961007875293

NSN

5961-00-787-5293

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2N293

TRANSISTOR

NSN, MFG P/N

5961007875293

NSN

5961-00-787-5293

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1915 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

2N2141

TRANSISTOR

NSN, MFG P/N

5961007875295

NSN

5961-00-787-5295

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2N2141

TRANSISTOR

NSN, MFG P/N

5961007875295

NSN

5961-00-787-5295

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: POINT CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG

2N2140

TRANSISTOR

NSN, MFG P/N

5961007875296

NSN

5961-00-787-5296

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2N2140

TRANSISTOR

NSN, MFG P/N

5961007875296

NSN

5961-00-787-5296

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

2N955A

TRANSISTOR

NSN, MFG P/N

5961007875298

NSN

5961-00-787-5298

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2N955A

TRANSISTOR

NSN, MFG P/N

5961007875298

NSN

5961-00-787-5298

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

135888-01

TRANSISTOR

NSN, MFG P/N

5961007875305

NSN

5961-00-787-5305

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135888-01

TRANSISTOR

NSN, MFG P/N

5961007875305

NSN

5961-00-787-5305

MFG

BAE SYSTEMS CONTROLS INC

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N718A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/181
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/181 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL_!!