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5961-00-849-7214
20 Products
400J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008497214
NSN
5961-00-849-7214
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
DESIGN CONTROL REFERENCE: 400J
MANUFACTURERS CODE: 06KW9
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
400JDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008497214
NSN
5961-00-849-7214
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
DESIGN CONTROL REFERENCE: 400J
MANUFACTURERS CODE: 06KW9
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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2N335B
TRANSISTOR
NSN, MFG P/N
5961008497687
NSN
5961-00-849-7687
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE2640 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXI
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2N519
TRANSISTOR
NSN, MFG P/N
5961008498113
NSN
5961-00-849-8113
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-2N519 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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938D467-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008498600
NSN
5961-00-849-8600
MFG
WESTINGHOUSE ELECTRIC CORP
Description
COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
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943D367-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008498600
NSN
5961-00-849-8600
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
Related Searches:
2N1538
TRANSISTOR
NSN, MFG P/N
5961008498847
NSN
5961-00-849-8847
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2903 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLL
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7060893-13REV N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499133
NSN
5961-00-849-9133
7060893-13REV N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499133
NSN
5961-00-849-9133
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 7060893-13REV N
MANUFACTURERS CODE: 99971
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:
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D5213DMR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499133
NSN
5961-00-849-9133
MFG
SKYWORKS SOLUTIONS INC.
Description
DESIGN CONTROL REFERENCE: 7060893-13REV N
MANUFACTURERS CODE: 99971
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:
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MA4868BMR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499133
NSN
5961-00-849-9133
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
DESIGN CONTROL REFERENCE: 7060893-13REV N
MANUFACTURERS CODE: 99971
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:
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959561-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499145
NSN
5961-00-849-9145
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MC8936
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499145
NSN
5961-00-849-9145
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R6226
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008499145
NSN
5961-00-849-9145
MFG
N A P SMD TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9-04701
TRANSISTOR
NSN, MFG P/N
5961008499146
NSN
5961-00-849-9146
MFG
LCT ELECTRONICS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
9-04709
TRANSISTOR
NSN, MFG P/N
5961008499148
NSN
5961-00-849-9148
MFG
LCT ELECTRONICS
Description
DESIGN CONTROL REFERENCE: CT25
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 0NKU0
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
9-04800
TRANSISTOR
NSN, MFG P/N
5961008499150
NSN
5961-00-849-9150
MFG
LCT ELECTRONICS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 275.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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507008-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008499427
NSN
5961-00-849-9427
MFG
RAYTHEON COMPANY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
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D5082DANDD5082DR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008499427
NSN
5961-00-849-9427
D5082DANDD5082DR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008499427
NSN
5961-00-849-9427
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
D5082DMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008499427
NSN
5961-00-849-9427
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
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MA41312
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008499427
NSN
5961-00-849-9427
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
