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5961-00-956-8937

20 Products

57276-501-21

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961009568937

NSN

5961-00-956-8937

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57276-501-21

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961009568937

NSN

5961-00-956-8937

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 57276-501-21
MAJOR COMPONENTS: DIODES 9,BOARD 1
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TESTFEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

648J397G01

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009569134

NSN

5961-00-956-9134

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648J397G01

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009569134

NSN

5961-00-956-9134

MFG

BUFFALO POWER ELECTRONICS CENTER DE

904J626PC03

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009569134

NSN

5961-00-956-9134

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904J626PC03

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009569134

NSN

5961-00-956-9134

MFG

WESTINGHOUSE ELECTRIC CORP CONTROL BUSINESS UNIT

10630152-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009569600

NSN

5961-00-956-9600

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10630152-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009569600

NSN

5961-00-956-9600

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 18876-10630152 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.7 MAXIMUM FORWARD VOLTAGE, PEAK

A38B3X199G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009569600

NSN

5961-00-956-9600

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A38B3X199G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009569600

NSN

5961-00-956-9600

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 18876-10630152 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.7 MAXIMUM FORWARD VOLTAGE, PEAK

019-002659

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570348

NSN

5961-00-957-0348

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019-002659

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570348

NSN

5961-00-957-0348

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

D4075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570348

NSN

5961-00-957-0348

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D4075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570348

NSN

5961-00-957-0348

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

MA-44587

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570348

NSN

5961-00-957-0348

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MA-44587

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570348

NSN

5961-00-957-0348

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

1902-0017

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

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1902-0017

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

CD35657

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

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CD35657

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

DZ730820L

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

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DZ730820L

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

FZ7045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

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FZ7045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

PS18244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

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PS18244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

SZ10939-133

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

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SZ10939-133

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570426

NSN

5961-00-957-0426

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

190-0567

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

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190-0567

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

DESIGN CONTROL REFERENCE: 1902-0037
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1902-0037

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

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1902-0037

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

MFG

HEWLETT PACKARD CO

Description

DESIGN CONTROL REFERENCE: 1902-0037
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

LTA9309

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

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LTA9309

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

MFG

DLA LAND AND MARITIME

Description

DESIGN CONTROL REFERENCE: 1902-0037
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

PS18256A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

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PS18256A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009570427

NSN

5961-00-957-0427

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

DESIGN CONTROL REFERENCE: 1902-0037
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1688757

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009572022

NSN

5961-00-957-2022

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1688757

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009572022

NSN

5961-00-957-2022

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 1688757
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

TR30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009572022

NSN

5961-00-957-2022

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TR30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009572022

NSN

5961-00-957-2022

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: 1688757
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA: