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5961-00-958-5374

20 Products

353-2892-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585374

NSN

5961-00-958-5374

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353-2892-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585374

NSN

5961-00-958-5374

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.5 MINIMUM NOMINAL REGULATOR VOLTAGE AND 2.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N914B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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1N914B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N914BA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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1N914BA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

2007-9661

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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2007-9661

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

2995054

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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2995054

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

352-3282-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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352-3282-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

352-3282-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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352-3282-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

ALCATEL USA INC . DIV WTPG

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

507521-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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507521-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

51736700

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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51736700

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

TALLY PRINTER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

7701005-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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7701005-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

UNISYS CORP FEDERAL SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

S57-7992

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

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S57-7992

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009584837

NSN

5961-00-958-4837

MFG

MILTOPE CORPORATION DBA VT MILTOPE

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

11014272

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

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11014272

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

MFG

SPRINGFIELD ARMORY

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2828 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE,

11TR175

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

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11TR175

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

MFG

APPLIED ELECTRO MECHANICS INC

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2828 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE,

1850-0194

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

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1850-0194

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2828 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE,

2N1523

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

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2N1523

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

MFG

GENERAL MOTORS CORP DELCO ELECTRONICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2828 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE,

RELEASE2828A

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

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RELEASE2828A

TRANSISTOR

NSN, MFG P/N

5961009584879

NSN

5961-00-958-4879

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2828 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE,

CQT1077

TRANSISTOR

NSN, MFG P/N

5961009585123

NSN

5961-00-958-5123

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CQT1077

TRANSISTOR

NSN, MFG P/N

5961009585123

NSN

5961-00-958-5123

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: COLLECTOR CONNECTED TO CASE; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

FD1029HA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585255

NSN

5961-00-958-5255

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FD1029HA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585255

NSN

5961-00-958-5255

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: FD1029HA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SV9823

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585255

NSN

5961-00-958-5255

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SV9823

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585255

NSN

5961-00-958-5255

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: FD1029HA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SZ10896

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585255

NSN

5961-00-958-5255

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SZ10896

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009585255

NSN

5961-00-958-5255

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: FD1029HA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: