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5961-00-981-5584

20 Products

472-0309-001

TRANSISTOR

NSN, MFG P/N

5961009815584

NSN

5961-00-981-5584

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472-0309-001

TRANSISTOR

NSN, MFG P/N

5961009815584

NSN

5961-00-981-5584

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0309-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

CQT885

TRANSISTOR

NSN, MFG P/N

5961009807520

NSN

5961-00-980-7520

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CQT885

TRANSISTOR

NSN, MFG P/N

5961009807520

NSN

5961-00-980-7520

MFG

ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

352-9849-00

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009809798

NSN

5961-00-980-9798

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352-9849-00

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009809798

NSN

5961-00-980-9798

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: 352-9849-000
MANUFACTURERS CODE: 95105
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: ANY ACCEPTABLE SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
SURFACE TREATMENT: ANODIZE
THE MANUFACTURERS DATA:

352-9849-000

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009809798

NSN

5961-00-980-9798

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352-9849-000

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009809798

NSN

5961-00-980-9798

MFG

ALCATEL USA INC . DIV WTPG

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: 352-9849-000
MANUFACTURERS CODE: 95105
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: ANY ACCEPTABLE SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
SURFACE TREATMENT: ANODIZE
THE MANUFACTURERS DATA:

TXSL019-025

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009809798

NSN

5961-00-980-9798

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TXSL019-025

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009809798

NSN

5961-00-980-9798

MFG

CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: 352-9849-000
MANUFACTURERS CODE: 95105
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: ANY ACCEPTABLE SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
SURFACE TREATMENT: ANODIZE
THE MANUFACTURERS DATA:

G31G15H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009810033

NSN

5961-00-981-0033

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G31G15H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009810033

NSN

5961-00-981-0033

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

3868

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811631

NSN

5961-00-981-1631

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3868

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811631

NSN

5961-00-981-1631

MFG

INTERSIL CORPORATION

Description

DESIGN CONTROL REFERENCE: MR187
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

MR187

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811631

NSN

5961-00-981-1631

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MR187

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811631

NSN

5961-00-981-1631

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: MR187
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

U197

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811631

NSN

5961-00-981-1631

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U197

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811631

NSN

5961-00-981-1631

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: MR187
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

G31G8APS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811635

NSN

5961-00-981-1635

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G31G8APS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009811635

NSN

5961-00-981-1635

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL HEIGHT: 0.219 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

4JX12A514

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

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4JX12A514

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR

928112-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

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928112-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

MFG

RAYTHEON COMPANY

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR

SP8044

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

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SP8044

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR

SS71048

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

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SS71048

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009813275

NSN

5961-00-981-3275

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR

1N2483

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009814869

NSN

5961-00-981-4869

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1N2483

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009814869

NSN

5961-00-981-4869

MFG

ST-SEMICON INC

8862665

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009814869

NSN

5961-00-981-4869

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8862665

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009814869

NSN

5961-00-981-4869

MFG

PICATINNY ARSENAL

4JA421EX12S

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009814886

NSN

5961-00-981-4886

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4JA421EX12S

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009814886

NSN

5961-00-981-4886

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 1.035 INCHES NOMINAL
OVERALL LENGTH: 4.500 INCHES NOMINAL
OVERALL WIDTH: 1.035 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

7744405-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009814886

NSN

5961-00-981-4886

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7744405-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009814886

NSN

5961-00-981-4886

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 1.035 INCHES NOMINAL
OVERALL LENGTH: 4.500 INCHES NOMINAL
OVERALL WIDTH: 1.035 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

9975592

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009814886

NSN

5961-00-981-4886

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9975592

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009814886

NSN

5961-00-981-4886

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 1.035 INCHES NOMINAL
OVERALL LENGTH: 4.500 INCHES NOMINAL
OVERALL WIDTH: 1.035 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

1183-1401

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009815580

NSN

5961-00-981-5580

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1183-1401

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009815580

NSN

5961-00-981-5580

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS

Description

DESIGN CONTROL REFERENCE: 1183-1401
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08241
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: