My Quote Request
5961-00-995-2200
20 Products
1N3196
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952200
NSN
5961-00-995-2200
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3199 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3196
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952200
NSN
5961-00-995-2200
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3199 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-3280-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952200
NSN
5961-00-995-2200
353-3280-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952200
NSN
5961-00-995-2200
MFG
ALCATEL USA INC . DIV WTPG
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3199 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-3280-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952200
NSN
5961-00-995-2200
353-3280-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952200
NSN
5961-00-995-2200
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3199 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
235-0421-00
TRANSISTOR
NSN, MFG P/N
5961009952206
NSN
5961-00-995-2206
MFG
ALCATEL USA INC . DIV WTPG
Description
DESIGN CONTROL REFERENCE: B1390
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06845
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
B1390
TRANSISTOR
NSN, MFG P/N
5961009952206
NSN
5961-00-995-2206
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: B1390
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06845
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
015128038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
SERVO CORPORATION OF AMERICA
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
025-018
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
TRILITHIC INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0515-0752-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
0515-0752-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
DATUM INC BANCOMM-TIMING DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1-021-0412
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
1-021-0412
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
DOTRONIX INC BOULDER OPN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10047-701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
COOPER CROUSE-HINDS LLC DBA AIRPORT LIGHTING DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12043-0071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
12043-0071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
15-1752A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
EMERGENCY BEACON CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0175-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
152-0175-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1585243-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1851840&8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N706A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N752
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
SOLITRON DEVICES INC SEMICONDUCTOR GROUP JUPITER OPERS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N752A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2021107
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009952310
NSN
5961-00-995-2310
MFG
CEI CORP
Description
SEMICONDUCTOR DEVICE,DIODE