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5961-01-008-4977
20 Products
4913723-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010084977
NSN
5961-01-008-4977
4913723-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010084977
NSN
5961-01-008-4977
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
560186-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010084978
NSN
5961-01-008-4978
560186-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010084978
NSN
5961-01-008-4978
MFG
RAYTHEON COMPANY
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
4914592-00
TRANSISTOR
NSN, MFG P/N
5961010084989
NSN
5961-01-008-4989
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
4914717-00
TRANSISTOR
NSN, MFG P/N
5961010084990
NSN
5961-01-008-4990
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
3005864-00
TRANSISTOR
NSN, MFG P/N
5961010084991
NSN
5961-01-008-4991
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
728088-1
TRANSISTOR
NSN, MFG P/N
5961010084992
NSN
5961-01-008-4992
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
DS463HMD5000A
TRANSISTOR
NSN, MFG P/N
5961010084992
NSN
5961-01-008-4992
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
723088-6
TRANSISTOR
NSN, MFG P/N
5961010084993
NSN
5961-01-008-4993
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
SS2523H
TRANSISTOR
NSN, MFG P/N
5961010084993
NSN
5961-01-008-4993
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
ST933
TRANSISTOR
NSN, MFG P/N
5961010084993
NSN
5961-01-008-4993
MFG
SANDERSON INDUSTRIES /1989/ LTD
Description
TRANSISTOR
Related Searches:
723096-10
TRANSISTOR
NSN, MFG P/N
5961010084994
NSN
5961-01-008-4994
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
FN2863
TRANSISTOR
NSN, MFG P/N
5961010084994
NSN
5961-01-008-4994
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
50721-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010084995
NSN
5961-01-008-4995
MFG
TYCO ELECTRONICS CORPORATION DBA CII TECHNOLOGIES HARTMAN PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3005166-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010084996
NSN
5961-01-008-4996
3005166-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010084996
NSN
5961-01-008-4996
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10183549
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085346
NSN
5961-01-008-5346
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10183549
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SV-7754
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085346
NSN
5961-01-008-5346
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: 10183549
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
40-012686-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085347
NSN
5961-01-008-5347
40-012686-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085347
NSN
5961-01-008-5347
MFG
INTERLINK COMMUNICATIONS INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5082-3043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085347
NSN
5961-01-008-5347
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5800583-926201.131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085347
NSN
5961-01-008-5347
5800583-926201.131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085347
NSN
5961-01-008-5347
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
615507-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010085347
NSN
5961-01-008-5347
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
