My Quote Request
No products added yet
5961-01-033-2332
20 Products
15-14195-00
TRANSISTOR
NSN, MFG P/N
5961010332332
NSN
5961-01-033-2332
MFG
COMPAQ FEDERAL LLC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 175.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6578 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 9.0 MAXIMUM BREAKDOWN VOLTAGE, EMIT
Related Searches:
1N3912
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3913
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/308
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/308 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TH
Related Searches:
353-0215-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
353-0215-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3913
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/308
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/308 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TH
Related Searches:
4178600-792
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
4178600-792
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3913
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/308
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/308 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TH
Related Searches:
JANTX1N3913
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
JANTX1N3913
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010330831
NSN
5961-01-033-0831
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3913
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/308
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/308 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TH
Related Searches:
357-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010331331
NSN
5961-01-033-1331
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: D1201D
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 34371
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
D1201D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010331331
NSN
5961-01-033-1331
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: D1201D
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 34371
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
364-0015
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010331332
NSN
5961-01-033-1332
364-0015
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010331332
NSN
5961-01-033-1332
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: TIC116D
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.540 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
TIC116D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010331332
NSN
5961-01-033-1332
TIC116D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010331332
NSN
5961-01-033-1332
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: TIC116D
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.540 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
1A6818-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010332220
NSN
5961-01-033-2220
1A6818-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010332220
NSN
5961-01-033-2220
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
DESIGN CONTROL REFERENCE: 1A6818-2
MANUFACTURERS CODE: 97953
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.344 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
586462-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010332220
NSN
5961-01-033-2220
586462-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010332220
NSN
5961-01-033-2220
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 1A6818-2
MANUFACTURERS CODE: 97953
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.344 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SCPA6F
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010332220
NSN
5961-01-033-2220
SCPA6F
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010332220
NSN
5961-01-033-2220
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 1A6818-2
MANUFACTURERS CODE: 97953
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.344 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4038795-0001
TRANSISTOR
NSN, MFG P/N
5961010332329
NSN
5961-01-033-2329
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 4038795-0001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06845
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.246 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
D3-28
TRANSISTOR
NSN, MFG P/N
5961010332329
NSN
5961-01-033-2329
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 4038795-0001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06845
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.246 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
4038796-0001
TRANSISTOR
NSN, MFG P/N
5961010332330
NSN
5961-01-033-2330
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: D20-28B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
CD3707
TRANSISTOR
NSN, MFG P/N
5961010332330
NSN
5961-01-033-2330
MFG
RF GAIN LTD
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: D20-28B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
D20-28B
TRANSISTOR
NSN, MFG P/N
5961010332330
NSN
5961-01-033-2330
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: D20-28B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
1A5TRANSISTOR
TRANSISTOR
NSN, MFG P/N
5961010332331
NSN
5961-01-033-2331
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1A5TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: AIR TRAFFIC CONTROL BEACON INTERROGATOR 5 (ATCBI5)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.190 INCHES MAXIMUM
OVERALL WIDTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: STUD MOUNTING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
4038794-0001
TRANSISTOR
NSN, MFG P/N
5961010332331
NSN
5961-01-033-2331
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1A5TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: AIR TRAFFIC CONTROL BEACON INTERROGATOR 5 (ATCBI5)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.190 INCHES MAXIMUM
OVERALL WIDTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: STUD MOUNTING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
E1E
TRANSISTOR
NSN, MFG P/N
5961010332331
NSN
5961-01-033-2331
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1A5TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: AIR TRAFFIC CONTROL BEACON INTERROGATOR 5 (ATCBI5)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.190 INCHES MAXIMUM
OVERALL WIDTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: STUD MOUNTING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
