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5961-01-034-6802
20 Products
2239002285-5
TRANSISTOR
NSN, MFG P/N
5961010346802
NSN
5961-01-034-6802
MFG
COMTECH PST CORP. DIV HILL ENGINEERING
Description
DESIGN CONTROL REFERENCE: 2239002285-5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 31196
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
2239002285-6
TRANSISTOR
NSN, MFG P/N
5961010346803
NSN
5961-01-034-6803
MFG
COMTECH PST CORP. DIV HILL ENGINEERING
Description
DESIGN CONTROL REFERENCE: 2239002285-6
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 31196
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
GE-21
TRANSISTOR
NSN, MFG P/N
5961010346805
NSN
5961-01-034-6805
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
GE21
TRANSISTOR
NSN, MFG P/N
5961010346805
NSN
5961-01-034-6805
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
GE-14
TRANSISTOR
NSN, MFG P/N
5961010346806
NSN
5961-01-034-6806
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
Related Searches:
NF500
TRANSISTOR
NSN, MFG P/N
5961010346810
NSN
5961-01-034-6810
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
050-0934-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010346812
NSN
5961-01-034-6812
050-0934-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010346812
NSN
5961-01-034-6812
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80009-152-0323-01 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
SE-503
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010346812
NSN
5961-01-034-6812
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80009-152-0323-01 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
200068
TRANSISTOR
NSN, MFG P/N
5961010347362
NSN
5961-01-034-7362
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
TRANSISTOR
Related Searches:
200037
TRANSISTOR
NSN, MFG P/N
5961010347363
NSN
5961-01-034-7363
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
TRANSISTOR
Related Searches:
SMC501191-2
TRANSISTOR
NSN, MFG P/N
5961010347367
NSN
5961-01-034-7367
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
Related Searches:
134560-0001
TRANSISTOR
NSN, MFG P/N
5961010347368
NSN
5961-01-034-7368
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 45413-134560 DRAWING
Related Searches:
267AJJ105
TRANSISTOR
NSN, MFG P/N
5961010347368
NSN
5961-01-034-7368
MFG
SOLITRON DEVICES INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 45413-134560 DRAWING
Related Searches:
AC3523
TRANSISTOR
NSN, MFG P/N
5961010347368
NSN
5961-01-034-7368
MFG
API ELECTRONICS INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 45413-134560 DRAWING
Related Searches:
PP8624
TRANSISTOR
NSN, MFG P/N
5961010347368
NSN
5961-01-034-7368
MFG
MICROSEMI PPC INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 45413-134560 DRAWING
Related Searches:
202004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
202004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
MFG
CIPHER DATA PRODUCTS INC OEM MARKETING DIV
Description
DESIGN CONTROL REFERENCE: MDA980-1
MANUFACTURERS CODE: 04713
SPECIAL FEATURES: SINGLE-PHASE FULL-WAVE BRIDGE;50 VOLT;12 AMPS AT 55 DEG C;CASE 179;SILICON MATERIAL;1.255 IN. SQUARE;SOLDER LUG TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
400674-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
400674-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
MFG
TALLY PRINTER CORPORATION
Description
DESIGN CONTROL REFERENCE: MDA980-1
MANUFACTURERS CODE: 04713
SPECIAL FEATURES: SINGLE-PHASE FULL-WAVE BRIDGE;50 VOLT;12 AMPS AT 55 DEG C;CASE 179;SILICON MATERIAL;1.255 IN. SQUARE;SOLDER LUG TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
MDA980-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
MDA980-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: MDA980-1
MANUFACTURERS CODE: 04713
SPECIAL FEATURES: SINGLE-PHASE FULL-WAVE BRIDGE;50 VOLT;12 AMPS AT 55 DEG C;CASE 179;SILICON MATERIAL;1.255 IN. SQUARE;SOLDER LUG TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
SDA980-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
SDA980-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347444
NSN
5961-01-034-7444
MFG
DIRECTIE MATERIEEL KONINKLIJKE LUCHT MACHT
Description
DESIGN CONTROL REFERENCE: MDA980-1
MANUFACTURERS CODE: 04713
SPECIAL FEATURES: SINGLE-PHASE FULL-WAVE BRIDGE;50 VOLT;12 AMPS AT 55 DEG C;CASE 179;SILICON MATERIAL;1.255 IN. SQUARE;SOLDER LUG TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
4VBE408/42
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347445
NSN
5961-01-034-7445
4VBE408/42
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010347445
NSN
5961-01-034-7445
MFG
ALCATEL-LUCENT NETWORK SYSTEMS
Description
DESIGN CONTROL REFERENCE: E814-0
MANUFACTURERS CODE: 21845
SPECIAL FEATURES: SILICON FULL WAVE BRIDGE RECTIFIER;15 AMP;BRIDGE DESIGNED TO OPERATE AT HIGH CURRENT LEVELS;1.500 IN. LG BY 1.500 IN. W;2 MTG HOLES 0.140 IN. INSIDE DIA SPACED 1.312 IN. NOMINAL CENTER TO CENTER;M65 DEG C TO P175 DEG C OPERATING TEMP;PEAK REVERSE VOLTAGES
THE MANUFACTURERS DATA:
~1: UP TO 600 VOLTS REQUIRED
