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5961-01-060-2753
20 Products
113854-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010602753
NSN
5961-01-060-2753
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND LIMITER AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 5.800 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
Related Searches:
A88018A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010602753
NSN
5961-01-060-2753
MFG
L-3 COMMUNICATIONS CORPORATION DBA NARDA MICROWAVE WEST DIV NARDA MICROWAVE WEST
Description
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND LIMITER AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 5.800 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
Related Searches:
MA40050FMR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010603018
NSN
5961-01-060-3018
MA40050FMR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010603018
NSN
5961-01-060-3018
MFG
CANNON BRONZE CO
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.412 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.094 INCHES MAXIMUM
TERMINAL LENGTH: 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
3242047
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010603144
NSN
5961-01-060-3144
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
MATERIAL: ALUMINUM
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.620 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
65200-088
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603368
NSN
5961-01-060-3368
65200-088
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603368
NSN
5961-01-060-3368
MFG
DYNALEC CORPORATION
Description
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
Related Searches:
65200-076-1
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603369
NSN
5961-01-060-3369
65200-076-1
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603369
NSN
5961-01-060-3369
MFG
DYNALEC CORPORATION
Description
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
Related Searches:
65200-076-2
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603370
NSN
5961-01-060-3370
65200-076-2
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603370
NSN
5961-01-060-3370
MFG
DYNALEC CORPORATION
Description
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
Related Searches:
65200-079
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603371
NSN
5961-01-060-3371
65200-079
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010603371
NSN
5961-01-060-3371
MFG
DYNALEC CORPORATION
Description
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
Related Searches:
179SET271
TRANSISTOR
NSN, MFG P/N
5961010603463
NSN
5961-01-060-3463
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 866480-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.510 INCHES MINIMUM AND 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
866480-1
TRANSISTOR
NSN, MFG P/N
5961010603463
NSN
5961-01-060-3463
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 866480-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.510 INCHES MINIMUM AND 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
NSE8066
TRANSISTOR
NSN, MFG P/N
5961010603463
NSN
5961-01-060-3463
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 866480-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.510 INCHES MINIMUM AND 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
SJ3963H1
TRANSISTOR
NSN, MFG P/N
5961010603463
NSN
5961-01-060-3463
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 866480-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.510 INCHES MINIMUM AND 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
05G00050-0166
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010603464
NSN
5961-01-060-3464
05G00050-0166
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010603464
NSN
5961-01-060-3464
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 6000.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III END ITEM IDENTIFICATION: SONAR DOME RUBBER WINDOWS (SDRWS); AN/SQQ-89 SURFACE SHIP ASW COMBAT SYSTEM; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-118
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 11.230 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.690 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
Related Searches:
19-213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010603791
NSN
5961-01-060-3791
MFG
DRUCK INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
113864-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010604555
NSN
5961-01-060-4555
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 1.600 INCHES NOMINAL
OVERALL WIDTH: 1.600 INCHES NOMINAL
Related Searches:
PD18018
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010604555
NSN
5961-01-060-4555
MFG
FEI MICROWAVE INC
Description
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 1.600 INCHES NOMINAL
OVERALL WIDTH: 1.600 INCHES NOMINAL
Related Searches:
113865-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010604556
NSN
5961-01-060-4556
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.540 INCHES NOMINAL
OVERALL WIDTH: 1.300 INCHES NOMINAL
Related Searches:
PD16010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010604556
NSN
5961-01-060-4556
MFG
FEI MICROWAVE INC
Description
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.540 INCHES NOMINAL
OVERALL WIDTH: 1.300 INCHES NOMINAL
Related Searches:
113866-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010604557
NSN
5961-01-060-4557
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.540 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
PD16011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010604557
NSN
5961-01-060-4557
MFG
FEI MICROWAVE INC
Description
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR AND TUNNEL DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.540 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
