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5961-00-081-8572
20 Products
44B253309-002
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961000818572
NSN
5961-00-081-8572
MFG
GENICOM CORP
Description
SEMICONDUCTOR DEVIC
Related Searches:
44B253309P2
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961000818572
NSN
5961-00-081-8572
MFG
BAE SYSTEMS CONTROLS INC.
Description
SEMICONDUCTOR DEVIC
Related Searches:
1N832AM
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000818750
NSN
5961-00-081-8750
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
1N445
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000818850
NSN
5961-00-081-8850
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
NONDEFINITIVE SPEC/STD DATA: 1N445 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N1893
TRANSISTOR
NSN, MFG P/N
5961000819001
NSN
5961-00-081-9001
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 03640
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 6020551
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.310 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03640-6020551 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER
Related Searches:
6020551
TRANSISTOR
NSN, MFG P/N
5961000819001
NSN
5961-00-081-9001
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 03640
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 6020551
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.310 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03640-6020551 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER
Related Searches:
1M10Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000819003
NSN
5961-00-081-9003
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 1M10Z
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
44B253310-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000819800
NSN
5961-00-081-9800
44B253310-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000819800
NSN
5961-00-081-9800
MFG
GENICOM CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM PEAK POSITIVE GATE VOLTAGE
Related Searches:
133-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000819801
NSN
5961-00-081-9801
MFG
ENGINEERED ELECTRIC COMPANY DBA DRS FERMONT
Description
DESIGN CONTROL REFERENCE: 133-0005
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 93742
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD
THE MANUFACTURERS DATA:
Related Searches:
44B253304-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000819801
NSN
5961-00-081-9801
44B253304-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000819801
NSN
5961-00-081-9801
MFG
GENICOM CORP
Description
DESIGN CONTROL REFERENCE: 133-0005
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 93742
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD
THE MANUFACTURERS DATA:
Related Searches:
10664168
TRANSISTOR
NSN, MFG P/N
5961000819938
NSN
5961-00-081-9938
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2907AL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/291
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM
Related Searches:
JAN2N2907AL
TRANSISTOR
NSN, MFG P/N
5961000819938
NSN
5961-00-081-9938
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2907AL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/291
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM
Related Searches:
JANTX2N2907AL
TRANSISTOR
NSN, MFG P/N
5961000819938
NSN
5961-00-081-9938
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2907AL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/291
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM
Related Searches:
1850-0050
TRANSISTOR
NSN, MFG P/N
5961000820385
NSN
5961-00-082-0385
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: MTG BASE SERVES AS A TERMINAL; JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-2N457 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
213-2N457
TRANSISTOR
NSN, MFG P/N
5961000820385
NSN
5961-00-082-0385
MFG
HEWLETT PACKARD CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: MTG BASE SERVES AS A TERMINAL; JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-2N457 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N457
TRANSISTOR
NSN, MFG P/N
5961000820385
NSN
5961-00-082-0385
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: MTG BASE SERVES AS A TERMINAL; JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-2N457 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
938D292-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000820610
NSN
5961-00-082-0610
938D292-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000820610
NSN
5961-00-082-0610
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: PS8058
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
938D392-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000820610
NSN
5961-00-082-0610
938D392-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000820610
NSN
5961-00-082-0610
MFG
WESTINGHOUSE ELECTRIC CORP
Description
DESIGN CONTROL REFERENCE: PS8058
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
CD32468
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000820610
NSN
5961-00-082-0610
MFG
TELCOM SEMICONDUCTOR INC
Description
DESIGN CONTROL REFERENCE: PS8058
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PS8058
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000820610
NSN
5961-00-082-0610
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PS8058
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
