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5961-01-072-4517

20 Products

SM-A-777704-1

TRANSISTOR

NSN, MFG P/N

5961010724517

NSN

5961-01-072-4517

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SM-A-777704-1

TRANSISTOR

NSN, MFG P/N

5961010724517

NSN

5961-01-072-4517

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 275.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC

2132161-1

TRANSISTOR

NSN, MFG P/N

5961010724780

NSN

5961-01-072-4780

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2132161-1

TRANSISTOR

NSN, MFG P/N

5961010724780

NSN

5961-01-072-4780

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F/TF-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2132161-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

2N5153

TRANSISTOR

NSN, MFG P/N

5961010724780

NSN

5961-01-072-4780

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2N5153

TRANSISTOR

NSN, MFG P/N

5961010724780

NSN

5961-01-072-4780

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F/TF-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2132161-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

SP1063

TRANSISTOR

NSN, MFG P/N

5961010724780

NSN

5961-01-072-4780

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SP1063

TRANSISTOR

NSN, MFG P/N

5961010724780

NSN

5961-01-072-4780

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F/TF-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2132161-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

1N3605

DIODE

NSN, MFG P/N

5961010725099

NSN

5961-01-072-5099

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1N3605

DIODE

NSN, MFG P/N

5961010725099

NSN

5961-01-072-5099

MFG

INFORMATION DISPLAYS INC

93SE309

TRANSISTOR

NSN, MFG P/N

5961010725208

NSN

5961-01-072-5208

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93SE309

TRANSISTOR

NSN, MFG P/N

5961010725208

NSN

5961-01-072-5208

MFG

SOLITRON DEVICES INC.

014-697

TRANSISTOR

NSN, MFG P/N

5961010725209

NSN

5961-01-072-5209

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014-697

TRANSISTOR

NSN, MFG P/N

5961010725209

NSN

5961-01-072-5209

MFG

AMPEX SYSTEMS CORP

014-796

TRANSISTOR

NSN, MFG P/N

5961010725210

NSN

5961-01-072-5210

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014-796

TRANSISTOR

NSN, MFG P/N

5961010725210

NSN

5961-01-072-5210

MFG

AMPEX SYSTEMS CORP

580-089

TRANSISTOR

NSN, MFG P/N

5961010725211

NSN

5961-01-072-5211

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580-089

TRANSISTOR

NSN, MFG P/N

5961010725211

NSN

5961-01-072-5211

MFG

AMPEX SYSTEMS CORP

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
OVERALL WIDTH: 0.125 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

697-3G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725212

NSN

5961-01-072-5212

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697-3G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725212

NSN

5961-01-072-5212

MFG

MICRO USPD INC

Q317815013

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725212

NSN

5961-01-072-5212

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Q317815013

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725212

NSN

5961-01-072-5212

MFG

RHEINMETALL AIR DEFENCE AG

1805083-38

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725213

NSN

5961-01-072-5213

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1805083-38

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725213

NSN

5961-01-072-5213

MFG

AMPEX SYSTEMS CORP

1805083-40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725214

NSN

5961-01-072-5214

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1805083-40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725214

NSN

5961-01-072-5214

MFG

AMPEX SYSTEMS CORP

013-834

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725215

NSN

5961-01-072-5215

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013-834

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725215

NSN

5961-01-072-5215

MFG

AMPEX SYSTEMS CORP

581-244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725216

NSN

5961-01-072-5216

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581-244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725216

NSN

5961-01-072-5216

MFG

AMPEX SYSTEMS CORP

134486-0002

TRANSISTOR

NSN, MFG P/N

5961010725357

NSN

5961-01-072-5357

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134486-0002

TRANSISTOR

NSN, MFG P/N

5961010725357

NSN

5961-01-072-5357

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.203 INCHES MINIMUM AND 0.207 INCHES MAXIMUM
OVERALL LENGTH: 0.058 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 45413-134486 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

35831E

TRANSISTOR

NSN, MFG P/N

5961010725357

NSN

5961-01-072-5357

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35831E

TRANSISTOR

NSN, MFG P/N

5961010725357

NSN

5961-01-072-5357

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.203 INCHES MINIMUM AND 0.207 INCHES MAXIMUM
OVERALL LENGTH: 0.058 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 45413-134486 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1548112-5

TRANSISTOR

NSN, MFG P/N

5961010725841

NSN

5961-01-072-5841

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1548112-5

TRANSISTOR

NSN, MFG P/N

5961010725841

NSN

5961-01-072-5841

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83298-1548112 DRAWING

2N2222AJAN

TRANSISTOR

NSN, MFG P/N

5961010725841

NSN

5961-01-072-5841

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2N2222AJAN

TRANSISTOR

NSN, MFG P/N

5961010725841

NSN

5961-01-072-5841

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83298-1548112 DRAWING

1534862-24

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725842

NSN

5961-01-072-5842

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1534862-24

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010725842

NSN

5961-01-072-5842

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1534862-24
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.688 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83298-1534862 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0