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5961-01-100-4929
20 Products
EP2647
TRANSISTOR
NSN, MFG P/N
5961011004929
NSN
5961-01-100-4929
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.540 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.540 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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1N1341B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004931
NSN
5961-01-100-4931
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4021 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-3677-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004932
NSN
5961-01-100-4932
353-3677-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004932
NSN
5961-01-100-4932
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
8465
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004932
NSN
5961-01-100-4932
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM FORWARD VOLTAGE, AVERAGE
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D5992-89
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004932
NSN
5961-01-100-4932
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM FORWARD VOLTAGE, AVERAGE
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1901-1085
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004933
NSN
5961-01-100-4933
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3691 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
353-3691-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004933
NSN
5961-01-100-4933
353-3691-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004933
NSN
5961-01-100-4933
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3691 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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9495
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011004933
NSN
5961-01-100-4933
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3691 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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445/4/02726/000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005002
NSN
5961-01-100-5002
445/4/02726/000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005002
NSN
5961-01-100-5002
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: HIGH-VOLTAGE; 14 DUAL-IN-LINE LEADS; MONOLITHIC; ALL SEMICONDUCTORS HAVE A JUNCTION PATTERN ARRANGEMENT OF NPN
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CA3146E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005002
NSN
5961-01-100-5002
CA3146E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005002
NSN
5961-01-100-5002
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: HIGH-VOLTAGE; 14 DUAL-IN-LINE LEADS; MONOLITHIC; ALL SEMICONDUCTORS HAVE A JUNCTION PATTERN ARRANGEMENT OF NPN
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R-22-4246
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005002
NSN
5961-01-100-5002
R-22-4246
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005002
NSN
5961-01-100-5002
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: HIGH-VOLTAGE; 14 DUAL-IN-LINE LEADS; MONOLITHIC; ALL SEMICONDUCTORS HAVE A JUNCTION PATTERN ARRANGEMENT OF NPN
Related Searches:
351-1973-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
351-1973-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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40-008041-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
40-008041-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
MFG
INTERLINK COMMUNICATIONS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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91332269
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
91332269
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
MFG
THALES COMMUNICATIONS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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U430
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011005003
NSN
5961-01-100-5003
MFG
WIMA SPEZIALVERTRIEB ELEKTRONISCHER BAUELEMENTE GMBH & CO. KG
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
1N5407
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011005501
NSN
5961-01-100-5501
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.098 INCHES MAXIMUM
OVERALL LENGTH: 0.299 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N5407CT-ND
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011005501
NSN
5961-01-100-5501
1N5407CT-ND
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011005501
NSN
5961-01-100-5501
MFG
DIGI-KEY CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.098 INCHES MAXIMUM
OVERALL LENGTH: 0.299 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
QS055000
TRANSISTOR
NSN, MFG P/N
5961011005884
NSN
5961-01-100-5884
MFG
POWER/MATE CO
Description
DESIGN CONTROL REFERENCE: QS055000
INCLOSURE MATERIAL: METAL
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 23934
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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2N6230
TRANSISTOR
NSN, MFG P/N
5961011005885
NSN
5961-01-100-5885
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE6334 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.440 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY:
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DMS88 105B
TRANSISTOR
NSN, MFG P/N
5961011005885
NSN
5961-01-100-5885
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE6334 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.440 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY:
