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5961-01-138-2859
20 Products
0N516340
TRANSISTOR
NSN, MFG P/N
5961011382859
NSN
5961-01-138-2859
MFG
NATIONAL SECURITY AGENCY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: KI-32;HVU
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -0.4 MINIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
0N516341
TRANSISTOR
NSN, MFG P/N
5961011382860
NSN
5961-01-138-2860
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
0N516342
TRANSISTOR
NSN, MFG P/N
5961011382861
NSN
5961-01-138-2861
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
0N516343
TRANSISTOR
NSN, MFG P/N
5961011382862
NSN
5961-01-138-2862
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
0N516326-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382863
NSN
5961-01-138-2863
0N516326-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382863
NSN
5961-01-138-2863
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N516326-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382864
NSN
5961-01-138-2864
0N516326-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382864
NSN
5961-01-138-2864
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N516327-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382865
NSN
5961-01-138-2865
0N516327-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382865
NSN
5961-01-138-2865
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N516328
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382866
NSN
5961-01-138-2866
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N516330-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382867
NSN
5961-01-138-2867
0N516330-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382867
NSN
5961-01-138-2867
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N516333
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011382868
NSN
5961-01-138-2868
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
151-0625-00
TRANSISTOR
NSN, MFG P/N
5961011383340
NSN
5961-01-138-3340
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
52816200A
TRANSISTOR
NSN, MFG P/N
5961011383340
NSN
5961-01-138-3340
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
TRANSISTOR
Related Searches:
547011
TRANSISTOR
NSN, MFG P/N
5961011383340
NSN
5961-01-138-3340
MFG
PIONEER MAGNETICS INC.
Description
TRANSISTOR
Related Searches:
651274
TRANSISTOR
NSN, MFG P/N
5961011383340
NSN
5961-01-138-3340
MFG
THALES COMMUNICATIONS S.A.
Description
TRANSISTOR
Related Searches:
D45H11
TRANSISTOR
NSN, MFG P/N
5961011383340
NSN
5961-01-138-3340
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
TRANSISTOR
Related Searches:
Q45-0003-000
TRANSISTOR
NSN, MFG P/N
5961011383340
NSN
5961-01-138-3340
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
Related Searches:
151-0710-00
TRANSISTOR
NSN, MFG P/N
5961011383341
NSN
5961-01-138-3341
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
2N6715A
TRANSISTOR
NSN, MFG P/N
5961011383341
NSN
5961-01-138-3341
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
MPSW01A
TRANSISTOR
NSN, MFG P/N
5961011383341
NSN
5961-01-138-3341
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
34031037-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011383354
NSN
5961-01-138-3354
34031037-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011383354
NSN
5961-01-138-3354
MFG
SYPRIS ELECTRONICS LLC
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.7 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 28009-34031037 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRA
