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5961-00-422-0901
20 Products
28472-358
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
MFG
SELEX SENSORS & AIRBORNE SYSTEMS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1855-0064
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004220531
NSN
5961-00-422-0531
1855-0064
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004220531
NSN
5961-00-422-0531
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
Related Searches:
DN643
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004220531
NSN
5961-00-422-0531
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
Related Searches:
1901-0115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220532
NSN
5961-00-422-0532
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 3.0 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-5076
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220532
NSN
5961-00-422-0532
MFG
HEWLETT PACKARD CO
Description
CAPACITANCE RATING IN PICOFARADS: 3.0 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
2N3055
TRANSISTOR,SPECIAL
NSN, MFG P/N
5961004220789
NSN
5961-00-422-0789
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
TRANSISTOR,SPECIAL
Related Searches:
CV8889
TRANSISTOR,SPECIAL
NSN, MFG P/N
5961004220789
NSN
5961-00-422-0789
MFG
QINETIQ LTD
Description
TRANSISTOR,SPECIAL
Related Searches:
1N4148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220814
NSN
5961-00-422-0814
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BS3177
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220814
NSN
5961-00-422-0814
MFG
THERMO ELECTRON MANUFACTURING LIMITED T/A THERMO FISHER SCIENTIFIC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ND402271
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220814
NSN
5961-00-422-0814
MFG
RACAL ACOUSTICS LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5960-99-0372200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220874
NSN
5961-00-422-0874
5960-99-0372200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220874
NSN
5961-00-422-0874
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CV7100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220874
NSN
5961-00-422-0874
MFG
MINISTRY OF DEFENCE PROCUREMENT EXEC UTIVE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
N151054-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220874
NSN
5961-00-422-0874
MFG
GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SC204-108
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220874
NSN
5961-00-422-0874
MFG
SELEX GALILEO LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5961-99-0372393
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220892
NSN
5961-00-422-0892
5961-99-0372393
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220892
NSN
5961-00-422-0892
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SC204-115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220892
NSN
5961-00-422-0892
MFG
SELEX GALILEO LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40-666-375-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
40-666-375-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5961-99-0372393
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
5961-99-0372393
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CV7143
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
MFG
MINISTRY OF DEFENCE PROCUREMENT EXEC UTIVE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
N151054-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
N151054-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004220901
NSN
5961-00-422-0901
MFG
GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
