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5961-01-183-5044

20 Products

616543-902

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835044

NSN

5961-01-183-5044

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616543-902

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835044

NSN

5961-01-183-5044

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

III END ITEM IDENTIFICATION: AN/PRC-113V3
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

82RM100

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011833558

NSN

5961-01-183-3558

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82RM100

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011833558

NSN

5961-01-183-3558

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.637 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.047 INCHES NOMINAL
TERMINAL LENGTH: 0.812 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

89099927

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011833558

NSN

5961-01-183-3558

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89099927

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011833558

NSN

5961-01-183-3558

MFG

THALES AIR SYSTEMS SA

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.637 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.047 INCHES NOMINAL
TERMINAL LENGTH: 0.812 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

015001 03

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

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015001 03

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

MFG

MARINE CO INC

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FLANGE
MATERIAL: STEEL CORROSION RESISTING
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.859 INCHES NOMINAL
OVERALL WIDTH: 0.520 INCHES NOMINAL
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: PASSIVATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-S-5002 MIL STD ALL TREATMENT RESPONSES
UNTHREADED MOUNTING HOLE DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM ALL MOUNTING FACILITIES

251050-003

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

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251050-003

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

MFG

WATKINS-JOHNSON CO

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FLANGE
MATERIAL: STEEL CORROSION RESISTING
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.859 INCHES NOMINAL
OVERALL WIDTH: 0.520 INCHES NOMINAL
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: PASSIVATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-S-5002 MIL STD ALL TREATMENT RESPONSES
UNTHREADED MOUNTING HOLE DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM ALL MOUNTING FACILITIES

716894

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

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716894

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FLANGE
MATERIAL: STEEL CORROSION RESISTING
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.859 INCHES NOMINAL
OVERALL WIDTH: 0.520 INCHES NOMINAL
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: PASSIVATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-S-5002 MIL STD ALL TREATMENT RESPONSES
UNTHREADED MOUNTING HOLE DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM ALL MOUNTING FACILITIES

A664

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

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A664

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

MFG

SEASTROM MANUFACTURING CO. INC. DBA SEASTROM MANUFACTURING

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FLANGE
MATERIAL: STEEL CORROSION RESISTING
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.859 INCHES NOMINAL
OVERALL WIDTH: 0.520 INCHES NOMINAL
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: PASSIVATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-S-5002 MIL STD ALL TREATMENT RESPONSES
UNTHREADED MOUNTING HOLE DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM ALL MOUNTING FACILITIES

SM-A-803635-1

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

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SM-A-803635-1

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011833587

NSN

5961-01-183-3587

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FLANGE
MATERIAL: STEEL CORROSION RESISTING
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.859 INCHES NOMINAL
OVERALL WIDTH: 0.520 INCHES NOMINAL
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: PASSIVATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-S-5002 MIL STD ALL TREATMENT RESPONSES
UNTHREADED MOUNTING HOLE DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM ALL MOUNTING FACILITIES

645512-903

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

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645512-903

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

MFG

RAYTHEON COMPANY DBA RAYTHEON

BAL0105-50

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

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BAL0105-50

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

JT2304

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

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JT2304

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

MFG

RF PRODUCTS INC

SFR3143HB

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

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SFR3143HB

TRANSISTOR

NSN, MFG P/N

5961011835041

NSN

5961-01-183-5041

MFG

FREESCALE SEMICONDUCTOR INC.

2N6660

TRANSISTOR

NSN, MFG P/N

5961011835042

NSN

5961-01-183-5042

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2N6660

TRANSISTOR

NSN, MFG P/N

5961011835042

NSN

5961-01-183-5042

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AN/PRC-113V3
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-617713 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE

617713-902

TRANSISTOR

NSN, MFG P/N

5961011835042

NSN

5961-01-183-5042

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617713-902

TRANSISTOR

NSN, MFG P/N

5961011835042

NSN

5961-01-183-5042

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AN/PRC-113V3
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-617713 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE

MFE960

TRANSISTOR

NSN, MFG P/N

5961011835042

NSN

5961-01-183-5042

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MFE960

TRANSISTOR

NSN, MFG P/N

5961011835042

NSN

5961-01-183-5042

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AN/PRC-113V3
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-617713 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE

619915-903

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

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619915-903

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

III END ITEM IDENTIFICATION: AN/PRC-113V3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

6479-80

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

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6479-80

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

MFG

SKYWORKS SOLUTIONS INC.

Description

III END ITEM IDENTIFICATION: AN/PRC-113V3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

MA4P377

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

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MA4P377

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

III END ITEM IDENTIFICATION: AN/PRC-113V3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

UX619915-903

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

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UX619915-903

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

MFG

SEMI-GENERAL INC .

Description

III END ITEM IDENTIFICATION: AN/PRC-113V3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

UX919915-903

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

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UX919915-903

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011835043

NSN

5961-01-183-5043

MFG

MICROMETRICS INC

Description

III END ITEM IDENTIFICATION: AN/PRC-113V3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON